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SML1004R2AN

Description
Power Field-Effect Transistor, 3.5A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size98KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

SML1004R2AN Overview

Power Field-Effect Transistor, 3.5A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

SML1004R2AN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance4.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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