CMLT5088ETRLEADFREE datasheet, PDF

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CMLT5088ETRLEADFREE: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size454KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMLT5088ETRLEADFREE Overview

Transistor

CMLT5088ETRLEADFREE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	300
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
surface mount	YES
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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CMLT5078E NPN/PNP

CMLT5087E PNP/PNP

CMLT5088E NPN/NPN

ENHANCED SPECIFICATION

SURFACE MOUNT SILICON

DUAL TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT5078E,

CMLT5087E, and CMLT5088E are surface mount

silicon transistors with enhanced specifications

designed for applications requiring high gain and low

noise.

MARKING CODES: CMLT5078E: L78

CMLT5087E: L87

CMLT5088E: L88

SOT-563 CASE

MAXIMUM RATINGS:

(TA=25

♦

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

UNITS

5.0

100

350

-65 to +150

357

♦

Collector-Emitter Voltage

♦

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25

C unless otherwise noted)

TYP

SYMBOL

TEST CONDITIONS

MIN

NPN PNP

MAX

ICBO

VCB=20V

UNITS

♦

BVCBO

♦

BVCEO

♦

BVEBO

♦

VCE(SAT)

♦

VCE(SAT)

♦

hFE

VBE(SAT)

IEBO

VEB=3.0V

IC=100μA

IC=1.0mA

IE=100μA

IC=10mA, IB=1.0mA

IC=100mA, IB=10mA

IC=10mA, IB=1.0mA

VCE=5.0V, IC=0.1mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=100mA

VCE=5.0V,

VCB=5.0V,

IC=500μA, f=20MHz

IE=0, f=1.0MHz

5.0

135

8.7

110

700

300

100

430

435

430

125

150

105

7.5

225

700

390

380

350

100

400

800

900

♦

hFE

♦

hFE

♦

Cob

Cib

hfe

MHz

4.0

VBE=0.5V, IC=0, f=1.0MHz

VCE=5.0V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=100μA, RS=10kΩ,

f=10Hz to 15.7kHz

350

1400

3.0

♦

Enhanced specification

♦

Additional Enhanced specification

♦

R4 (22-March 2013)

CMLT5088ETRLEADFREE Related Products

	CMLT5088ETRLEADFREE	CMLT5078EBKTIN/LEAD	CMLT5087EBKTIN/LEAD	CMLT5087ETRLEADFREE	CMLT5087ETRTIN/LEAD	CMLT5078ETRLEADFREE	CMLT5078ETRTIN/LEAD	CMLT5088EBKTIN/LEAD
Description	Transistor	Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP	Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP	Transistor	Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP	Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP	Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP	Small Signal Bipolar Transistor, 0.1A I(C), NPN and PNP
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	incompatible	conform to	incompatible	incompatible
Reach Compliance Code	compliant	unknown	unknown	compliant	unknown	compliant	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	300	300	300	300	300	300	300	300
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN/PNP	NPN/PNP	PNP	NPN/PNP	NPN/PNP	NPN/PNP	NPN/PNP
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Maker	-	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor

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