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RGP806

Description
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC,
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerDiotec Electronics Corp
Environmental Compliance
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RGP806 Overview

Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC,

RGP806 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSFM-T2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW NOISE
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse current10 µA
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. FSDG-800-1B
FEATURES
Glass Passivated for high reliability/temperature performance
Low switching noise
Low forward voltage drop
Low thermal resistance
High surge current capability
Fast switching for high efficiency
Low leakage
2
MECHANICAL SPECIFICATION
ACTUAL SIZE OF
TO-220AC PACKAGE
SERIES RGP800 - RGP806
C
D4
D1
φP
A
A1
D
B4
B3
D2
D3
Maximum
in
mm
0.187 4.75
MECHANICAL DATA
Sym
3
1
Minimum
mm
in
0.121*
0.14*
0.035
0.09
0.025*
0.050*
Case: TO-220 molded plastic (U/L Flammability Rating 94V-0)
Terminals: Plated rectangular pins
Solderability: Per MIL-STD 202 Method 208 guaranteed
Polarity: Marked on case
Mounting Position: Any
Weight: 0.07 Ounces (2.05 Grams)
4.75*
3.56*
0.043 1.1
0.9
0.102 2.6
2.3
0.64*
1.27*
0.04
1.0
0.413 10.5
0.61 15.5
0.59 15.0
0.262* 6.6*
0.16
4.0
0.54 13.7
0.60 15.2
0.108* 2.75*
φP
0.126* 3.2*
* These dimensions are "Typicals".
A
A1
A2
B
B1
B2
B3
B4
C
D
D1
D2
D3
D4
B1
B
B1
B2
A2
TO - 220AC
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive loads, derate current by 20%.
PARAMETER (TEST CONDITIONS)
Series Number
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Peak Recurrent Reverse Voltage
Average Forward Rectified Current @ Tc = 110 C
Peak Forward Surge Current ( 8.3mS single half sine wave
superimposed on rated load)
Maximum Forward Voltage at 8 Amps DC
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance, Junction to Case
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (I
F
=0.5A, I
R
=1A, I
RR
=0.25A)
Junction Operating and Storage Temperature Range
NOTES: (1) Measured at 1MHz and an applied reverse voltage of 4 volts.
o
SYMBOL
RATINGS
RGP800 RGP801 RGP802 RGP804
RGP806
600
420
600
UNITS
V
RM
V
RMS
V
RRM
I
O
I
FSM
V
FM
o
50
35
50
100
70
100
200
140
200
8
150
1.3
10
250
3
55
400
280
400
VOLTS
AMPS
VOLTS
µA
°C/W
pF
200
250
nSec
°C
4.97ffsdg800
@ T
C
= 25 C
@ T
C
= 100
o
C
I
RM
R
θJC
C
J
T
RR
T
J,
T
STG
150
-50 to +150
H37

RGP806 Related Products

RGP806 RGP804 RGP802 RGP801 RGP800
Description Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 400V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC, Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC,
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE HIGH RELIABILITY, LOW NOISE
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
JESD-30 code R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 8 A 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 400 V 200 V 100 V 50 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.25 µs 0.2 µs 0.15 µs 0.15 µs 0.15 µs
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Base Number Matches 1 1 1 - -
Maker - - Diotec Electronics Corp Diotec Electronics Corp Diotec Electronics Corp
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