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K7N163601M-HC15

Description
ZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size461KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7N163601M-HC15 Overview

ZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119, BGA-119

K7N163601M-HC15 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionBGA, BGA119,7X17,50
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time3.8 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum standby current0.01 A
Minimum standby current3.14 V
Maximum slew rate0.4 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Base Number Matches1
K7N163601M
K7N161801M
Document Title
512Kx36 & 1Mx18 Pipelined NtRAM
TM
512Kx36 & 1Mx18-Bit Pipelined NtRAM
TM
Revision History
Rev. No.
0.0
0.1
0.2
History
1. Initial document.
1. Update ICC & ISB values.
1. Change I
SB
value from 80mA to 110mA at -67.
2. Change I
SB
value from 70mA to 90mA at -72 .
3. Change I
SB
value from 60mA to 80mA at -10 .
1. Change pin allocation at 119BGA .
- A4 ; from NC to A .
- B2 ; from A to CS2
- B4 ; from CKE to ADV
- B6 ; from A to CS2
- G4 ; from ADV to A
- H4 ; from NC to WE
- M4 ; from WE toCKE
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -67,
from 370mA to 380mA at -75,
from 300mA to 320mA at -10,
1. Add tCYC 167MHz.
1. Final Spec Release.
Draft Date
Dec. 22. 1998
May. 27. 1999
Sep. 04. 1999
Remark
Preliminary
Preliminary
Preliminary
0.3
Nov. 19. 1999
Preliminary
0.4
1.0
Nov. 26. 1999
Dec. 08. 1999
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
December 1999
Rev 1.0
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