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2W10

Description
2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size89KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
Download Datasheet Parametric View All

2W10 Overview

2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

2W10 Parametric

Parameter NameAttribute value
MakerHY Electronic
Reach Compliance Codeunknow
Samacsys DescriptiHY Electronic Corp 2W10, Common Anode, Common Cathode Bridge Rectifier, 2A 1000V, 4-Pin WOB
Diode typeBRIDGE RECTIFIER DIODE
2WO/2WOM SERIES
SILICON BRIDGE RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000Volts
FORWARD CURRENT
- 2.0
Amperes
WOB
FEATURES
Surge overload rating -60 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic
.220(5.6)
.200(5.1)
.366(9.3)
.350(8.9)
.181(4.6)
.150(3.8)
WOBM
.386(9.8)
.354(9.0)
technique results in expensive product
Mounting position:Any
Lead: Sliver plated copper lead
1.1
(27.9)
MIN
1.0
(25.4)
MIN
1.1
(27.9)
MIN
1.0
(25.4)
MIN
.032(0.81)
POS. .028(0.71)
LEAD
POS.
LEAD
.032(0.81)
.028(0.71)
.220(5.6)
.180(4.6)
.220(5.6)
.180(4.6) SPACING
.220(5.6)
.180(4.6)
.220(5.6)
.180(4.6) SPACING
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
2W005
2W01
2W02
2W02M
200
140
200
2W04
2W04M
400
280
400
2.0
2W06
2W06M
600
420
600
2W08
2W08M
800
560
800
2W10
2W10M
1000
700
1000
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375″(9.5mm) Lead Lengths
Peak Forward Surge Current ,
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
I
2
t Rating for Fusing (t<8.3ms)
Maximum Forward Voltage Drop
Per Element at 2.0A Peak
Maximum DC Reverse Current at Rated
DC Blocking Voltage
T
J
=25℃
T
J
=100℃
@T
A
=25
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
2W005M 2W01M
50
35
50
100
70
100
UNIT
V
V
V
A
I
FSM
I
2
t
V
F
I
R
C
J
T
J
T
STG
60
15.0
1.1
10.0
1.0
30
-55 to +125
-55 to +150
A
A
2
s
V
μA
mA
pF
Typical Junction Capacitance Per Element (Note1)
Operating Temperature Range
Storage Temperature Range
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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