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2W06G

Description
2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size67KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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2W06G Overview

2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
2W005(G) - - - 2W10(G)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 2.0 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 50 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Plastic material has UL flammability classification
94V-O
Glass passivated chip junctions
WOM
A
.150(3.8)
.130(3.3)
.305(7.75)
.265(6.73)
.220(6.73)
.180(4.6)
B
.360(9.1)
.340(8.6)
.395(10.0)
.355(9.0)
.340(8.6)
.300(7.6)
B
RB15
WO
WOM
A
MIN
1.27(32.3)
MIN
1.20(30.5)
POS.
LEAD
.032(.81)
.028(.71)
DIA
.220
.180
.220
.180
(5.6)
(4.6)
(5.6)
(4.6)
Weight: 0.050 ounces,1.42 grams
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
2W005 2W01 2W02 2W04 2W06 2W08 2W10 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
50.0
A
V
F
I
R
T
J
T
STG
1.0
10.0
1.0
- 55 ---- +
150
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287015
BL
GALAXY ELECTRICAL
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