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2SK4197FG

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size318KB,6 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SK4197FG Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

2SK4197FG Parametric

Parameter NameAttribute value
Objectid1780508695
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)3.3 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)28 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Ordering number : ENA1367
2SK4197FG
SANYO Semiconductors
DATA SHEET
2SK4197FG
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc *1
IDpack *2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO
s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO
s ideal heat dissipation condition)*3
Conditions
Ratings
600
±30
3.5
3.3
13
2.0
28
150
--55 to +150
29
3.3
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Note :
*1
Shows chip capability.
*2
Package limited.
*3
SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=50V, L=5mH, IAV=3.3A
*5
L
5mH, Single pulse
Marking : K4197
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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