MOS FET 2SK3801
Absolute Maximum Ratings
(Ta=25ºC)
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
*
1
P
D
EAS*
1
Tch
Tstg
Ratings
40
±20
±70
±140
Unit
V
V
A
A
W
mJ
ºC
ºC
Electrical Characteristics
Symbol
Test Conditions
(Ta=25ºC)
External Dimensions
TO-3P
1.8
5.0
±0.2
15.6
±0.4
13.6
9.6
4.8
±0.2
2.0
±0.1
min
40
Ratings
typ
max
±10
100
4.0
6.0
Unit
100
(Tc=25ºC)
400
150
–40
to +150
*
1:
P
W
100µs, duty cycle 1%
*
2:
V
DD
= 20V, L = 1mH, I
L
= 20A, unclamped,
R
G
= 50Ω
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
t
rr
R
th (ch-c)
R
th (ch-a)
I
D
= 100µA, V
GS
= 0V
V
GS
=
±15V
V
DS
= 40V, V
GS
= 0V
V
DS
= 10V, I
D
= 1mA
V
DS
= 10V, I
D
= 35A
V
GS
= 10V, I
D
= 35A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 35A
V
DD
= 20V, R
G
= 22Ω
R
L
= 0.57Ω, V
GS
= 10V
I
SD
= 50A, V
GS
= 0V
I
SD
= 25A, di/dt = 50A/µs
2.0
30
3.0
50
5.0
5100
1200
860
100
100
300
130
0.9
100
1.5
1.25
35.71
V
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
ns
°C/W
°C/W
19.9
±0.3
4.0
2.0
a
b
3.2
±0.1
20.0 min
4.0 max
2
3
1.05
–0.1
+0.2
+0.2
0.65
–0.1
5.45
±0.1
15.8
±
0.2
5.45
±0.1
1. Gate
2. Drain
3. Source
1.4
a) Part No.
b) Lot No.
(Unit : mm)
(1)
(2)
(3)
■
I
D
—
V
DS
Characteristics (typ.)
70
60
50
10V
5.5V
5.0V
V
GS
= 4.5V
■
I
D
—
V
GS
Characteristics (typ.)
70
60
■
V
DS
—
V
GS
Characteristics (typ.)
1.0
■
R
e (yfs) —
I
D
Characteristics (typ.)
1000
(
V
DS
=
10V
)
(Ta = 25ºC)
(V
DS
= 10V)
0.8
50
40
30
20
10
0
0.5
1.0
1.5
2.0
0
0
Ta = 150°C
25°C
–55°C
40
30
20
10
0
V
DS
(V)
I
D
(A)
I
D
(A)
0.6
0.4
I
D
= 70A
0.2
35A
Re
(yfs)
(S)
100
Tc = –55°C
25°C
150°C
10
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
1
0
5
10
15
20
1
10
70
V
DS
(V)
V
GS
(V)
V
GS
(V)
I
D
(A)
■
R
DS (ON)
—
I
D
Characteristics (typ.)
7.0
6.0
Ta = 25ºC
V
GS
= 10V
■
R
DS (ON)
—
T
C
Characteristics (typ.)
10.0
8.0
I
D
= 35A
V
GS
= 10V
■
j-c
10
— Pw Characteristics
(Single pulse)
■
Dynamic I/O Characteristics (typ.)
30
V
DS
(I
D
= 35A)
15
R
D
S (ON)
(mΩ)
5.0
4.0
3.0
2.0
1.0
0
0
10
20
30
40
50
60
70
R
D
S (ON)
(mΩ)
j-c (ºC/W)
V
DS
(V)
1
20
V
GS
V
DD
= 8V
12V
14V
16V
24V
10
6.0
4.0
2.0
0
–60 –50
0.1
10
5
0
50
100
150
0.01
0.00001 0.0001 0.001 0.01
0
0.1
1
10
100
0
50
100
0
150
I
D
(A)
Tc (ºC)
Pw (s)
Qg
(nC)
■
Capacitance — V
DS
Characteristics (typ.)
■
I
DR
—
V
SD
Characteristics (typ.)
50000
■
Safe Operating Area (single pulse)
■
P
D
—
T
C
Characteristics
500
100
N
(O
)
(Ta = 25ºC)
V
GS
= 0V
f = 1MHz
70
60
50
(Ta = 25ºC)
P
T
ED
IT
120
100
80
=1
Capacitance (pF)
P
T
P
T
0
µ
10000
Ciss
M
LI
P
T
=1
=1
s
40
30
20
Ta = 150°C
25°C
–55°C
10
R
P
D
(W)
I
DR
(A)
I
C
(A)
DS
=1
m
0m
s
s
00
µ
s
60
40
1000
Coss
Crss
10
1
20
0.1
0.1
0
1
10
100
0
20
40
60
80 100 120 140 160
100
0
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
DS
(V)
V
SD
(V)
V
DS
(V)
Tc (ºC)
112
V
GS
(V)
Embedded System
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