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CMLT3820GTRPBFREE

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size448KB,3 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CMLT3820GTRPBFREE Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,

CMLT3820GTRPBFREE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
CMLT3820G
SURFACE MOUNT SILICON
VERY LOW VCE(SAT)
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT3820G is
a very low VCE(SAT) NPN Transistor, designed for
applications where small size and efficiency are the
prime requirements. Packaged in a space saving
SOT-563 surface mount package, this component
provides performance characteristics suitable for the
most demanding size constrained applications.
MARKING CODE: 38G
SOT-563 CASE
APPLICATIONS:
DC/DC Converters
Voltage Clamping
Protection Circuits
Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
Cob
FEATURES:
Device is
Halogen Free
by design
High Current (IC=1.0A)
VCE(SAT)=0.28V MAX @ IC=1.0A
SOT563 surface mount package
Complementary PNP device
CMLT7820G
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JA
80
60
5.0
1.0
2.0
300
250
-65 to +150
500
MAX
100
100
UNITS
V
V
V
A
A
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
V
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=60V
VEB=5.0V
IC=100μA
80
IC=10mA
60
5.0
IE=100μA
IC=100mA, IB=1.0mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=1.0A, IB=50mA
VCE=5.0V, IC=1.0A
VCE=5.0V, IC=1.0mA
200
VCE=5.0V, IC=500mA
200
VCE=5.0V, IC=1.0A
100
VCE=10V, IC=50mA
150
VCB=10V, IE=0, f=1.0MHz
0.115
0.15
0.28
1.1
0.9
10
MHz
pF
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