Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | , |
| Reach Compliance Code | unknown |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 14 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 30 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| BUK445-100A | BUK445-100B | |
|---|---|---|
| Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| Is it Rohs certified? | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown |
| Configuration | Single | Single |
| Maximum drain current (Abs) (ID) | 14 A | 12 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 | e0 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 30 W | 30 W |
| surface mount | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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