EEWORLDEEWORLDEEWORLD

Part Number

Search

MBRB30H50CT-HE3/81

Description
DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size149KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

MBRB30H50CT-HE3/81 Overview

DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

MBRB30H50CT-HE3/81 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
Base Number Matches1
New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
2
MBR30HxxCT
PIN 1
PIN 3
PIN 2
CASE
3
1
MBRF30HxxCT
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC-Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
1
MBRB30HxxCT
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
2 x 15 A
35 V to 60 V
150 A
0.56 V, 0.59 V
80 µA, 60 µA
175 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified
current (Fig. 1)
total device
per diode
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
1.0
25
35
35
35
45
45
45
30
15
80
150
0.5
20
50
50
50
60
60
60
UNIT
V
V
V
A
mJ
A
A
mJ
Non-repetitive avalanche energy per diode
at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode
at t
p
= 2.0 µs, 1 kHz
Peak non-repetitive reverse energy
(8/20 µs waveform)
Document Number: 88866
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1112  1215  221  810  1922  23  25  5  17  39 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号