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GC9904-QR1-129C

Description
Mixer Diode, Low Barrier, S Band, Silicon,
CategoryDiscrete semiconductor    diode   
File Size311KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

GC9904-QR1-129C Overview

Mixer Diode, Low Barrier, S Band, Silicon,

GC9904-QR1-129C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionS-CQMW-F4
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Maximum diode capacitance0.5 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.28 V
frequency bandS BAND
JESD-30 codeS-CQMW-F4
JESD-609 codee0
Number of components4
Number of terminals4
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeLOW BARRIER
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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