Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT5013-4 & SFT5014-4
SFT5013/5 & SFT5014/5
SFT5013/39 & SFT5014/39
0.5 AMP, 800 – 900 Volts
NPN Transistor
FEATURES:
BVCER to 900 volts
Low Saturation Voltage
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
2N5010 thru 2N5012 Also Available, Contact Factory
TX, TXV, and S-Level Screening Available
Symbol
5013
5014
5013
5014
V
CER
V
CBO
V
EBO
5013
5014
BV
CEO
I
C
I
B
-4
/39 & /5
P
D
Value
800
900
800
900
5
300
400
0.5
250
1.0
2.0
20
2.0
20
-65 to +200
175 / 440
50 (typ 30)
Units
V
V
V
V
A
mA
W
W
mW/ºC
W
mW/ºC
ºC
ºC/W
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT50
__
│
│
│
│
│
│
│
└
__
│
│
│
│
│
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
/39:
TO-39
/5:
TO-5
-4:
LCC4
14 = 900V
__
└
Family / Voltage
13 = 800V
Maximum Ratings
Collector – Emitter Voltage
(R
BE
= 1 kΩ)
Collector – Base Voltage
Emitter – Base Voltage
Collector – Emitter Breakdown Voltage
Peak Collector Current
Peak Base Current
Total Device Dissipation
@ T
C
= 25º C
@ T
A
= 25º C
Derate above T
C
= 25º C
@ T
C
= 100º C
Derate above T
C
= 100º C
Operating and Storage Temperature
Thermal Resistance, Junction to Case
-4
/39 & /5
T
OP
, T
STG
R
θJC
/ R
θJA
R
θJC
Notes:
1/ For ordering information, price, operating curves, and
availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ Unless otherwise specified, maximum ratings/electrical
characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
4 PIN CLCC (LCC4)
TO-39
TO-5
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0031H
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT5013-4 & SFT5014-4
SFT5013/5 & SFT5014/5
SFT5013/39 & SFT5014/39
Symbol
5013
5014
5013
5014
BV
CER
BV
CBO
BV
EBO
5013
5014
5013
5014
Min
800
900
800
900
5
––
––
––
––
—
10
30
––
––
20
––
––
––
––
––
PIN 2: BASE
Electrical Characteristic
3/
Collector – Emitter Breakdown Voltage
(I
C
= 200 µA
DC
, R
BE
= 1 KΩ)
Collector–Base Breakdown Voltage
(I
C
= 200 µA
DC
)
Emitter–Base Breakdown Voltage
(I
E
= 50 µA
DC
)
Collector Cutoff Current
(V
CB
= 650 V)
(V
CB
= 700 V)
(V
CB
= 650 V, T
C
= 100°C)
(V
CB
= 700 V, T
C
= 100°C)
Emitter Cutoff Current
(V
EB
= 4V)
DC Current Gain
4/
(I
C
= 5 mA
DC
, V
CE
= 10 V
DC
)
(I
C
= 20 mA
DC
, V
CE
= 10 V
DC
)
Collector – Emitter Saturation Voltage
4/
(I
C
= 20 mA
DC
, I
B
= 5 mA
DC
)
Base – Emitter Saturation Voltage
4/
(I
C
= 20 mA
DC
, I
B
= 5 mA
DC
)
Current Gain Bandwidth Product
(I
C
= 20 mA
DC
, V
CE
= 10 V
DC
, f = 20 MHz)
Output Capacitance
(V
CB
= 10 V
DC
, I
E
= 0 A
DC
, f = 1.0 MHz)
Delay Time
Rise Time
Storage Time
Fall Time
Case Outline: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
Typ
Max
––
––
Units
V
V
V
11.5
––
12
12
100
100
I
CBO
µAdc
I
EBO
h
FE
V
CE(Sat)
V
BE(Sat)
f
T
Cob
V
CC
= 125 V
DC
,
I
C
= 100 mA
DC
,
I
B1
= 20 mA
DC
,
I
B2
= 20 mA
DC
td
tr
ts
tf
0.001
60
70
0.07
0.73
30
6.6
50
200
2200
400
20
-
180
1.6
1.0
––
30
200
1200
3000
800
µA
––
Vdc
Vdc
MHz
pF
nsec
Case Outline: TO-39
PIN 1: EMITTER
PIN 3: COLLECTOR
Case Outline: 4 PIN CLCC (LCC4)
PIN 1: COLLECTOR
.225
.215
PIN 2: EMITTER
.076
.060
PIN 3: BASE
PIN 4: N/C
.048
.032
.160
.145
3
.050 REF
4
1
4x .025 REF
2
PIN 1
INDENTIFIER
.048
.032
.088
.072
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0031H
DOC
Embedded System
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