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S8050-B-AP-HF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size259KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

S8050-B-AP-HF Overview

Small Signal Bipolar Transistor,

S8050-B-AP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
S8050-B
S8050-C
S8050-D
NPN Silicon
Transistors
TO-92
A
E
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking : S8050
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
Halogen
free available upon request by adding suffix "-HF"
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=3.0Vdc, I
C
=0)
DC Current Gain
(I
C
=50mAdc, V
CE
=1.0Vdc)
DCCurrent Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base- Emitter Voltage
(I
E
=100mAdc)
Transistor Frequency
(I
C
=20mAdc, V
CE
=6.0Vdc, f=30MHz)
Rank
Range
B
85-150
Min
40
25
5.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
D
B
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
C
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
85
50
---
---
---
300
---
0.6
1.2
1.4
---
---
E
E
B
C
B
Vdc
Vdc
Vdc
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
C
G
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
CLASSIFICATION OF H
FE (1)
C
120-200
D
160-300
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision:
D
1 of 2
2013/01/01
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