EEWORLDEEWORLDEEWORLD

Part Number

Search

PWB60A40

Description
Silicon Controlled Rectifier, 94000mA I(T), 400V V(RRM), 3 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size388KB,2 Pages
ManufacturerSanRex
Websitehttp://www.ecomallbiz.com/sanrex
Download Datasheet Parametric Compare View All

PWB60A40 Overview

Silicon Controlled Rectifier, 94000mA I(T), 400V V(RRM), 3 Element

PWB60A40 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationCOMMON ANODE
Maximum DC gate trigger current3000 mA
Maximum DC gate trigger voltage10 V
Quick connection description0
Description of screw terminals0
Maximum holding current100 mA
Maximum leakage current10 mA
On-state non-repetitive peak current1800 A
Number of components3
Maximum on-state current94000 A
Maximum operating temperature150 °C
Minimum operating temperature-30 °C
Repeated peak reverse voltage400 V
Trigger device typeSCR
Base Number Matches1
THYRISTOR MODULE
NON-ISOLATED TYPE
PWB60A
PWB60A
is a Thyristor module suitable for low voltage, 3 phase recifier applications.
I
T(AV)
60A (each device)
High Surge Current 1800 A (60Hz)
Easy Construction
Non-isolated. Mounting base as common Anode terminal
Applications
Welding power Supply
Various DC power Supply
Unit
A
Maximum Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
I
T
I
T
AV
RMS
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (R.M.S.)
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
Mounting
torque
Mass
Mounting M6
Terminal M5
Ratings
PWB60A30
300
360
300
Conditions
Single phase, half wave, 180 conduction, Tc 123
Single phase, half wave, 180 conduction, Tc 123
1
2
cycle,
PWB60A40
400
480
400
Ratings
60
94
1640
/
1800
13,500
10
1
3
10
5
Unit
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
s
I
TSM
I
2
t
P
GM
P
G
AV
50Hz/60Hz, peak value, non-repetitive
I
FGM
V
FGM
V
RGM
di dt
Tj
Tstg
I
G
150mA Tj 25
V
D
1
2
V
DRM
dI
G
/
dt 1A
/
s
30
30
50
150
125
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
4.7 48
2.7 28
170
N
f
B
g
Electrical Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
tgt
dv dt
I
H
Rth j-c
Item
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Thermal Impedance, max.
Conditions
at V
DRM
, single phase, half wave, Tj 150
at V
DRM
, single phase, half wave, Tj 150
On-State Current 180A, Tj 25
Tj 25
Tj 150
I
T
1A V
D
6V
V
D
1
2
V
DRM
Ratings
10
10
1.25
150
/
2
0.25
Unit
mA
mA
V
mA
/
V
V
s
V
/
s
mA
/
W
Inst. measurement
I
T
60A I
G
150mA Tj 25
Tj 150 , V
D
Tj 25
Junction to case
1
dI
G
/
dt 1A
/
s
2
V
DRM
, Exponential wave.
3
V
D
2
V
DRM
3
Module
1
10
50
100
0.35
53

PWB60A40 Related Products

PWB60A40 PWB60A30
Description Silicon Controlled Rectifier, 94000mA I(T), 400V V(RRM), 3 Element Silicon Controlled Rectifier, 94000mA I(T), 300V V(RRM), 3 Element
Reach Compliance Code unknown unknown
Configuration COMMON ANODE COMMON ANODE
Maximum DC gate trigger current 3000 mA 3000 mA
Maximum DC gate trigger voltage 10 V 10 V
Maximum holding current 100 mA 100 mA
Maximum leakage current 10 mA 10 mA
On-state non-repetitive peak current 1800 A 1800 A
Number of components 3 3
Maximum on-state current 94000 A 94000 A
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -30 °C -30 °C
Repeated peak reverse voltage 400 V 300 V
Trigger device type SCR SCR
Base Number Matches 1 1
MCU burning program
What is the principle of burning a program into a microcontroller? How is a program burned into a microcontroller? Why does it run after being burned in? This question has troubled me for a long time ...
feivy88 Embedded System
[LinkNode Development Board Review] Chapter 1: Unboxing White Lotus Blossom
To start the topic, I was going to publish a sharing report after completing the test. Inspired by everyone's rush to publish, let's join in! [align=left]1. Unboxing[/align][align=left]With some expec...
dwwzl RF/Wirelessly
MSN component issues
When customizing the wince system, I need to add MSN, but I lack the .NET messenger service support. What components should I add? Thank you....
heini Embedded System
Recruitment (@成都or深圳)——Welcome talented women who understand electronic technology
If you are tired of being an engineer, or want to seek new career opportunities, if you are confident in your ability to express yourself, understand mainstream electronic technology concepts, and hav...
amyma Recruitment
TI engineers share how to easily solve the overheating problem caused by overloading of power banks
[align=center][/align] [align=left]If the power bank overheats while charging the mobile device, it can easily lead to safety problems such as fire and explosion. We often see such accidents in the me...
alan000345 Analogue and Mixed Signal
Opportunities facing my country's medical electronics industry
Innovative technology has been constantly changing human life. The development of the medical electronics industry can be said to be the best footnote to this statement: medical electronics has used e...
天天谈芯 Medical Electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2910  1756  2542  1968  1126  59  36  52  40  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号