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MXTA42B1-G

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size99KB,4 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
Download Datasheet Parametric Compare View All

MXTA42B1-G Overview

Transistor

MXTA42B1-G Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
MXTA42
NPN Plastic-Encapsulate Transistor
* “G” Lead(Pb)-Free
1
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89
2
3
M aximum R atings
( T
A
=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
300
300
5.0
500
Unit
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature Range
Symbol
PD
R
θ
JA
TJ,Tstg
Max
500
4.0
250
-55 to +150
Unit
mW
mW/ C
C/W
C
Device Marking
MXTA42=A42
Characteristics
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0)
Collector Cutoff Current (VCB= 200 Vdc, IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc, IC =0)
1.FR-5=1.0 x 0.75 x 0.062 in.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
300
300
5.0
-
-
Max
-
-
-
0.25
0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WE ITR O N
http://www.weitron.com.tw

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Reach Compliance Code unknown unknown unknown
Base Number Matches 1 1 1
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