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UPA2732T1A-E1-AZ

Description
Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8
CategoryDiscrete semiconductor    The transistor   
File Size173KB,6 Pages
ManufacturerNEC Electronics
Environmental Compliance
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UPA2732T1A-E1-AZ Overview

Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8

UPA2732T1A-E1-AZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionLEAD FREE, HVSON-8
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)40 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)40 A
Maximum drain-source on-resistance0.0067 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N8
JESD-609 codee6
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ
PA2732T1A
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The
μ
PA2732T1A is P-channel MOS Field Effect Transistor designed
for power management applications of notebook computers and Li-ion
battery protection circuit.
PACKAGE DRAWING (Unit: mm)
1.27
1
2
8
3
4
6
5
6
±0.2
5.4
±0.2
0.10 S
5
±0.2
0.27
±0.05
1.0 MAX.
4.1
±0.2
7
FEATURES
Low on-state resistance
R
DS(on)1
= 3.7 mΩ MAX. (V
GS
=
−10
V, I
D
=
−20
A)
R
DS(on)2
= 6.7 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−20
A)
Low C
iss
: C
iss
= 3280 pF TYP.
Built-in gate protection diode
Small and surface mount package (8pin HVSON)
0.42
−0.05
+0.1
0.10 M
0
+0.05
−0
1
ORDERING INFORMATION
PART NUMBER
PACKAGE
8pin HVSON
8pin HVSON
0.2
μ
PA2732T1A-E1-AZ
μ
PA2732T1A-E2-AZ
Note
Note
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
Note
Pb-free (This product does not contain Pb in external electrode.)
3.65
±0.2
0.6
±0.15
0.7
±0.15
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
−30
V
V
GSS
m20
V
Gate to Source Voltage (V
DS
= 0 V)
m40
A
Drain Current (DC)
I
D(DC)
Note1
Drain Current (pulse)
I
D(pulse)
m160
A
Note2
Total Power Dissipation
P
T1
1.5
W
Note2
Total Power Dissipation (PW =10 sec)
P
T2
4.6
W
150
°C
Channel Temperature
T
ch
−55
to +150
°C
Storage Temperature
T
stg
Note3
Single Avalanche Current
−20
A
I
AS
Note3
Single Avalanche Energy
E
AS
40
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1%
2.
Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)
3.
Starting T
ch
= 25°C, V
DD
=
−15
V, R
G
= 25
Ω,
L = 100
μ
H, V
GS
=
−20 →
0 V
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17393EJ1V1DS00 (1st edition)
Date Published January 2006 NS CP(K)
Printed in Japan
5.15
±0.2
Body
Diode
2005

UPA2732T1A-E1-AZ Related Products

UPA2732T1A-E1-AZ UPA2732T1A-E2-AZ
Description Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8 Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, HVSON-8
Is it Rohs certified? conform to conform to
package instruction LEAD FREE, HVSON-8 LEAD FREE, HVSON-8
Reach Compliance Code compliant compliant
Avalanche Energy Efficiency Rating (Eas) 40 mJ 40 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 40 A 40 A
Maximum drain-source on-resistance 0.0067 Ω 0.0067 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-N8 R-PDSO-N8
JESD-609 code e6 e6
Number of components 1 1
Number of terminals 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) 160 A 160 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN BISMUTH TIN BISMUTH
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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