ZDT619 datasheet, PDF - EEWORLD Datasheet

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ZDT619: DescriptionPower Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size2MB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZDT619 Overview

Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

ZDT619 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	2.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	165 MHz
Base Number Matches	1

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SM-8 DUAL NPN MEDIUM POWER

HIGH GAIN TRANSISTORS

ISSUE 1 - NOVEMBER 1995

ZDT619

C

1

C

1

C

2

C

2

PARTMARKING DETAIL T619

B

1

E

1

B

2

E

2

SM-8

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

T

j

:T

stg

VALUE

50

5

6

2

-55 to +150

UNIT

V

A

°C

THERMAL CHARACTERISTICS

PARAMETER

Total Power Dissipation at T

amb

= 25°C*

Any single die on

Both die on equally

Derate above 25°C*

Any single die on

Both die on equally

Thermal Resistance - Junction to Ambient*

Any single die on

Both die on equally

SYMBOL

P

tot

VALUE

2

2.5

16

20

62.5

50

UNIT

W

mW/ °C

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

3 - 330

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