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ZVN4206GVTA

Description
Power Field-Effect Transistor, 1A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size74KB,4 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZVN4206GVTA Overview

Power Field-Effect Transistor, 1A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ZVN4206GVTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFAST SWITCHING
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)20 pF
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)8 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)27 ns
Maximum opening time (tons)20 ns
Base Number Matches1
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt V
DS
* R
DS(on)
= 1Ω
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
PARTMARKING DETAIL -
ZVN4206V
ZVN4206GV
D
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
= 25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
= 25°C
Continuous Body Diode Current at T
amb
=
25°C
Avalanche Current - Repetitive
Avalanche Energy - Repetitive
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
I
SD
I
AR
E
AR
T
j
:T
stg
VALUE
60
1
8
±
20
2
600
600
15
-55 to +150
UNIT
V
A
A
V
W
mA
mA
mJ
°C
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