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SFPE-64V

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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SFPE-64V Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon,

SFPE-64V Parametric

Parameter NameAttribute value
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL
Base Number Matches1
Schottky Barrier Diodes (Surface Mount)
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
40V
Others
Rth (j- )
Mass
Fig.
(°C/ W)
(g)
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
max
V
F
(V)
I
F
(A)
I
R
(mA)
V
R
= V
RM
max
I
R
(H)
(mA)
V
R
= V
RM
Ta =100°C max
Tj
(°C)
t
rr
(ns)
I
F
/
I
RP
(mA)
SSB-14
SFPB-54
SFPB-64
SFPB-74
SFPE-64
40
0.5
1.0
1.5
4
30
0.58
0.5
1.0
0.1
1.0
5
150.0
0.009
A
0.55
–40 to +150
60
2.0
2.0
40
0.50
0.60
2.0
0.2
20
(Tj = 150°C)
2.0
5.0
50
50
100/100
20.0
0.072
B
SSB-14
0.5
Tc—I
F(AV)
Derating
D.C.
V
F
—I
F
Characteristics
(Typical)
5
5
V
R
—I
R
Characteristics
(Typical)
I
FSM
(A)
4
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F (AV)
(A)
T
a
= 125ºC
Reverse Current I
R
(mA)
Forward Current I
F
(A)
0.4
1
1
100ºC
0.1
60ºC
0.01
25ºC
20ms
1–t/T=5/6
0.3
1–t/T=2/3
0.2
0.1
Peak Forward Surge Current
3
2
Tj =125ºC
V
R
=40V
0.1
Sinewave
1–t /T=1/2
0.01
t
T
0
0
25
T
a
= 125ºC
100ºC
60ºC
26ºC
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0.001
100
125
50
75
0.001
0.0005
0
10
20
30
40
50
0
1
5
10
50
Case Temperature Tc
(°C)
Forward Voltage V
F
(V)
Reverse Voltage
V
R
(V)
Overcurrent Cycles
SFPB-54
1.0
Ta—I
F(AV)
Derating
t 1.6 P.C.B
Solder Land
=
3.0 35µmCu
V
F
—I
F
Characteristics
(Typical)
20
10
30
10
V
R
—I
R
Characteristics
(Typical)
I
FSM
(A)
30
25
20
15
10
5
0
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F (AV)
(A)
Reverse Current I
R
(mA)
T
a
= 125ºC
100ºC
Forward Current I
F
(A)
0.8
20ms
1
1
0.6
0.1
0.4
0.1
60ºC
0.2
0.01
T
a
= 125ºC
100ºC
60ºC
25ºC
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
25ºC
0
0
25
40 50
75
100
125
0.001
0.001
10
20
30
40
50
60
Peak Forward Surge Current
1
5
10
50
Ambient Temperature Ta (°C)
Forward Voltage V
F
(V)
Reverse Voltage
V
R
(V)
Overcurrent Cycles
SFPB-64
1.5
Ta—I
F(AV)
Derating
t 1.6 P.C.B
Solder Land
=
3.0 35µmCu
V
F
—I
F
Characteristics
(Typical)
20
10
30
10
V
R
—I
R
Characteristics
(Typical)
I
FSM
(A)
60
50
40
30
20
10
0
I
FMS
Rating
I
FSM
(A)
Average Forward Current I
F (AV)
(A)
Reverse Current I
R
(mA)
T
a
= 125ºC
100ºC
Forward Current I
F
(A)
1.2
20ms
1
1
0.9
0.1
0.6
0.1
60ºC
0.3
0.01
T
a
= 125ºC
100ºC
60ºC
25ºC
25ºC
0.01
0
0
25
40 50
75
100
125
0.001
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
10
20
30
40
50
60
Peak Forward Surge Current
1
5
10
50
Ambient Temperature Ta (°C)
Forward Voltage V
F
(V)
Reverse Voltage
V
R
(V)
Overcurrent Cycles
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
0.95
1.05
Fig.
B
4.5
±0.2
Ž
Œ
Anode

N.C
Ž
Cathode
Tolerance
±0.2
unless otherwise
specified

0.45
0.60
1.78
2.05
2.80
3.04
Œ
0.37
0.46
2.05
±0.2
2.6
±0.2
2.10
2.50
1.20
1.40
0.89
1.04
0.013
0.10
0.085
0.130
(0.15)
0.45
0.60
1.35
±0.4
2.0 min
5.1
–0.1
+0.4
1.35
±0.4
1.1
±0.2
1.5
±0.2
90
0.05

SFPE-64V Related Products

SFPE-64V SFPE-64VL SFPB-64VL SFPB-74V SFPB-74VL
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon,
package instruction R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 40 A 40 A 60 A 60 A 60 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum output current 2 A 2 A 1.5 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form C BEND C BEND C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum operating temperature 150 °C 150 °C 150 °C - -
Minimum operating temperature -40 °C -40 °C -40 °C - -
Base Number Matches 1 1 1 - -
Maximum reverse recovery time - - 0.05 µs 0.05 µs 0.05 µs
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