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SML10EUZ12BCR3

Description
10A, 1200V, SILICON, RECTIFIER DIODE, TO-247, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size38KB,2 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric View All

SML10EUZ12BCR3 Overview

10A, 1200V, SILICON, RECTIFIER DIODE, TO-247, 3 PIN

SML10EUZ12BCR3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-247
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, SNUBBER DIODE, HIGH RELIABILITY
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse recovery time0.045 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SML10EUZ12BC
Ehanced Ultrafast
Recovery Diode
1200 Volt, 2 x 10 Amp
Back of Case
Cathode
TECHNOLOGY
SML
10EUZ12BC
1 - Anode 1
2 - Com. Cathode
3 - Anode 2
The planar passivated and enhanced ultrafast recovery
diode features a triple charge control action utilising
Semelab’s graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
BENEFITS
• Very fast recovery for low switching losses
Common Cathode
• Ultra soft recovery with low EMI generation
1
• High dynamic ruggedness under all conditions
• Low temperature dependency
• Low on-state losses with positive temperature coefficient
• Stable blocking voltage and low leakage current
• Avalanche rated for high reliability circuit operation
2
3
See Package outline for mechanical data and more details
TO247 PACKAGE
Key Parameters
V
R
V
F
I
F
t
rr
(max)
(typ)
(max)
(max)
1200V
3.2V
2 X 10A
35nS
APPLICATIONS
• Freewheeling Diode for IGBTs and MOSFETs
• Uninterruptible Power Supplies UPS
• Switch Mode Power Supplies SMPS
• Inverse and Clamping Diode
• Snubber Diode
• Fast Switching Rectification
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25°C unless otherwise stated)
V
RRM
V
R
I
FAV
I
FSM(surge)
I
FS(surge)
P
D
W
AVL
T
J
,T
STG
Peak Repetitive Reverse Voltage
DC Reverse Blocking Voltage
Average Forward Current @Tc = 85°C
Repetitive Forward Current
Non-Repetitive Forward Current(10msec pulse)
Power Dissipation @Tc = 85°C
Avalanche Energy(L=40mH)
Operating & Storage Junction Temperature
1200V
1200V
10A
25A
100A
35W
10mJ
- 55 to 150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 2404
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