KSR2108TR datasheet, PDF - EEWORLD Datasheet

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KSR2108TR: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size40KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KSR2108TR Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

KSR2108TR Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.468
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	56
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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	KSR2108TR	KSR1108TF	KSR1108TI	KSR1108TR	KST14TF	KST14TR	KST14TI	KSR2106TR	KSR2107TF	KSR2114TF
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.3 A	0.3 A	0.3 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	30 V	30 V	30 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	DARLINGTON	DARLINGTON	DARLINGTON	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	56	56	56	56	10000	10000	10000	68	68	68
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	NPN	NPN	NPN	NPN	NPN	NPN	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1	1	1	1
Other features	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.468	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.468	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.468	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.468	-	-	-	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.1363	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	-	-	SWITCHING	SWITCHING	SWITCHING
Nominal transition frequency (fT)	200 MHz	250 MHz	250 MHz	250 MHz	-	-	-	200 MHz	200 MHz	200 MHz

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