KD4353 datasheet, PDF - EEWORLD Datasheet

KD4353: DescriptionSmall Signal Field-Effect Transistor, 35V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.021 X 0.023 INCH, DIE-3; CategoryDiscrete semiconductor The transistor; File Size2MB，60 Pages; ManufacturerSolitron Devices Inc.

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KD4353 Overview

Small Signal Field-Effect Transistor, 35V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.021 X 0.023 INCH, DIE-3

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DIE
package instruction	DIE, DIE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	35 V
Maximum drain-source on-resistance	350 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1 pF
JESD-30 code	DIE-3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package form	DIE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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