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KSC1222D27Z

Description
Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size95KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

KSC1222D27Z Overview

Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

KSC1222D27Z Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
KSC1222
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY LOW NOISE AMPLIFIER
Collector-Base Voltage: V
CBO
=50V
Low Noise Level: NL=40mV (Max)
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
50
45
5
50
250
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Noise Level
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
NL
Test Conditions
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=3V, I
C
=0.5mA
I
C
=20mA, I
B
=2mA
V
CE
=3V, I
C
=0.5mA
V
CE
=3V, I
C
=1mA
V
CE
=12V, I
E
= -0.1mA
R
S
=25KΩ
A
V
=80dB, (f=1KHz)
Min
50
45
5
50
100
1000
0.2
0.7
4.0
Typ
Max
Unit
V
V
V
nA
nA
V
V
MHz
mV
120
0.1
0.62
100
27
50
h
FE
CLASSIFICATION
Classification
h
FE
Y
120-240
G
200-400
L
350-700
V
600-1000
Rev. B
©
1999 Fairchild Semiconductor Corporation
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