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BZX84C27-T3

Description
Zener Diode, 27V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size150KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric View All

BZX84C27-T3 Overview

Zener Diode, 27V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC PACKAGE-3

BZX84C27-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.35 W
Certification statusNot Qualified
Nominal reference voltage27 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current2 mA
Base Number Matches1
SENSITRON
SEMICONDUCTOR
Data Sheet
2597,
Rev. –
BZX84C2V4 – BZX84C39
350mW SURFACE MOUNT ZENER DIODE
Features

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Planar Die Construction
350mW Power Dissipation
2.4 – 39V Nominal Zener Voltage
5% Standard Vz Tolerance
Designed for Surface Mount Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
A
TOP VIEW

L
B
C
M
                                                  
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Mechanical Data
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Case: SOT-23, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
Marking: Device Code (See Table Next Page)
K
J
G
TOP VIEW
SOT-23
Max
Min
0.51 0.014
1.40 0.047
2.50 0.083
1.05 0.035
0.61 0.018
2.05
0.07
3.05 0.104
0.15 0.0005
1.10 0.035
0.61 0.018
0.17 0.003
Max
0.020
0.055
0.098
0.041
0.024
0.081
0.120
0.006
0.043
0.024
0.007
In mm
In inch
Maximum Ratings
@T
A
=25° unless otherwise specified
C
Characteristic
Symbol
Value
Unit
Peak Pulse Power Dissipation at T
A
= 25° (Note 1)
C
P
d
350
mW
Forward Voltage @ I
F
= 10mA
V
F
0.9
V
Thermal Resistance Junction to Ambient (Note 1)
R

JA
357
°
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°
C
Note: 1. Valid provided that device terminals are kept at ambient temperature.
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