IDT7187S85DBG datasheet, PDF - EEWORLD Datasheet

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IDT7187S85DBG: DescriptionStandard SRAM, 64KX1, 85ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22; Categorystorage storage; File Size469KB，8 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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IDT7187S85DBG Overview

Standard SRAM, 64KX1, 85ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22

IDT7187S85DBG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	DIP
package instruction	0.300 INCH, CERAMIC, DIP-22
Contacts	22
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	85 ns
JESD-30 code	R-GDIP-T22
JESD-609 code	e3
length	27.051 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	22
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX1
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	7.62 mm
Base Number Matches	1

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CMOS Static RAM

64K (64K x 1-Bit)

Features

High speed (equal access and cycle time)

– Military: 25/35/45/55/70/85ns (max.)

Low power consumption

Battery backup operation—2V data retention

(L version only)

JEDEC standard high-density 22-pin ceramic

DIP packaging

Produced with advanced CMOS high-performance

technology

Separate data input and output

Input and output directly TTL-compatible

Military product compliant to MIL-STD-883, Class B

IDT7187S

IDT7187L

◆

Description

The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K

x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS

technology. Access times as fast as 25ns are available.

Both the standard (S) and low-power (L) versions of the IDT7187

provide two standby modes—I

and I

SB1

. I

provides low-power

operation; I

SB1

provides ultra-low-power operation. The low-power (L)

version also provides the capability for data retention using battery

backup. When using a 2V battery, the circuit typically consumes only

30µW.

Ease of system design is achieved by the IDT7187 with full

asynchronous operation, along with matching access and cycle times.

The device is packaged in an industry standard 22-pin, 300 mil ceramic

DIP.

Military grade product is manufactured in compliance with the latest

revision of MIL-STD-883, Class B, making it ideally suited to military

temperature applications demanding the highest level of performance

and reliability.

Functional Block Diagram

DATA

COLUMN I/O

DATA

OUT

ROW

SELECT

65,536-BIT

MEMORY ARRAY

GND

2986 drw 01

FEBRUARY 2001

DSC-2986/09

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