UFCJ800A ... UFCJ800M
UFCJ800A ... UFCJ800M
Ultrafast Silicon Rectifiers – Common Cathode
Ultraschnelle Silizium-Gleichrichter – Gemeinsame Kathode
Version 2011-02-17
10.1
±0.3
Ø 3.2
±0.2
4.5
±0.2
15
±0.3
Type
Typ
Nominal current
Nennstrom
2.7
±0.2
4
8A
50...1000 V
ITO-220AC
1.8 g
2.6
±0.2
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Isolated plastic case
Isoliertes Kunststoffgehäuse
3.8
±0.3
1 2 3
2.6
0.6
±0.2
8.4
13.6
1.3
0.7
±0.2
2.54
±0.1
1 2 3
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
±0.1
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
50
100
150
200
300
400
600
800
1000
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
50
100
150
200
300
400
600
800
1000
T
C
= 100°C
T
C
= 100°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V]
1
)
I
F
= 4 A
< 1.0
< 1.0
< 1.0
< 1.0
< 1.25
< 1.25
< 1.25
< 1.7
< 1.7
I
FAV
I
FAV
I
FRM
I
FSM
i
2
t
4 A
1
)
8 A
2
)
20 A
3
)
100/120 A
1
)
50 A
2
s
1
)
-50...+150°C
-50...+175°C
UFCJ800A
UFCJ800B
UFCJ800C
UFCJ800D
UFCJ800F
UFCJ800G
UFCJ800J
UFCJ800K
UFCJ800M
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
2
3
T
S
T
j
T
j
= 25°C ; Per Diode – Pro Diode
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
http://www.diotec.com/
© Diotec Semiconductor AG
1
UFCJ800A ... UFCJ800M
Characteristics
Type
Typ
T
j
= 25°C
UFCJ800A ... UFCJ800D
UFCJ800G ... UFCJ800J
UFCJ800K ... UFCJ800M
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Reverse recovery time
Sperrverzugszeit
t
rr
[ns]
1
)
< 25
< 35
< 75
T
j
= 25°C
V
R
= V
RRM
I
R
R
thC
Kennwerte
Reverse recovery time
Sperrverzugszeit
t
rr
[ns]
2
)
< 35
< 45
< 100
< 10 µA
< 3.9 K/W
3
)
120
[%]
100
10
[A]
2
10
80
1
T
j
= 125°C
T
j
= 25°C
60
40
10
-1
20
I
FAV
0
0
T
C
50
100
150
[°C]
I
F
10
-2
200a-(5a-0.95v)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1
2
3
I
F
= 0.5 A through/über I
R
= 1 A to/auf I
R
= 0.25 A
I
F
= 1.0 A, di/dt = -50 A/µs, V
R
= 30 V
Per Diode – Pro Diode
http://www.diotec.com/
© Diotec Semiconductor AG
2
Embedded System
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