X5R Dielectric
General Specifications
GENERAL DESCRIPTION
• General Purpose Dielectric for Ceramic Capacitors
• EIA Class II Dielectric
• Temperature variation of capacitance is within ±15%
from -55°C to +85°C
• Well suited for decoupling and filtering applications
• Available in High Capacitance values (up to 100μF)
PART NUMBER
(see page 2 for complete part number explanation)
1210
Size
(L" x W")
4
Voltage
4 = 4V
6 = 6.3V
Z = 10V
Y = 16V
3 = 25V
D = 35V
5 = 50V
D
Dielectric
D = X5R
107
Capacitance
Code (In pF)
2 Sig. Digits +
Number of
Zeros
M
Capacitance
Tolerance
K = ±10%
M = ±20%
A
Failure
Rate
A = N/A
T
Terminations
T = Plated Ni
and Sn
2
Packaging
2 = 7" Reel
4 = 13" Reel
7 = Bulk Cass.
9 = Bulk
A
Special
Code
A = Std.
NOTE: Contact factory for availability of Tolerance Options for Specific Part Numbers.
Contact factory for non-specified capacitance values.
TYPICAL ELECTRICAL CHARACTERISTICS
Insulation Resistance (Ohm-Farads)
Temperature Coefficient
20
15
Insulation Resistance vs Temperature
10,000
Capacitance
10
5
0
-5
-10
-15
-20
-60
-40
-20
0
+20
+40
+60
+80
1,000
100
%
Temperature
°C
0
0
20
40
60
80
100
120
Temperature
°C
23
X5R Dielectric
Specifications and Test Methods
Parameter/Test
Operating Temperature Range
Capacitance
Dissipation Factor
X5R Specification Limits
-55ºC to +85ºC
Within specified tolerance
≤
2.5% for
≥
50V DC rating
≤
3.0% for 25V DC rating
≤
12.5% Max. for 16V DC rating and lower
Contact Factory for DF by PN
100,000MΩ or 500MΩ - μF,
whichever is less
No breakdown or visual defects
No defects
≤
±12%
Meets Initial Values (As Above)
≥
Initial Value x 0.3
≥
95% of each terminal should be covered
with fresh solder
No defects, <25% leaching of either end terminal
≤
±7.5%
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
No visual defects
≤
±7.5%
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
No visual defects
≤
±12.5%
≤
Initial Value x 2.0 (See Above)
≥
Initial Value x 0.3 (See Above)
Meets Initial Values (As Above)
No visual defects
≤
±12.5%
≤
Initial Value x 2.0 (See Above)
≥
Initial Value x 0.3 (See Above)
Meets Initial Values (As Above)
Step 1: -55ºC ± 2º
Step 2: Room Temp
Step 3: +85ºC ± 2º
Step 4: Room Temp
30 ± 3 minutes
≤
3 minutes
30 ± 3 minutes
≤
3 minutes
Dip device in eutectic solder at 260ºC for 60
seconds. Store at room temperature for 24 ± 2
hours before measuring electrical properties.
90 mm
Measuring Conditions
Temperature Cycle Chamber
Freq.: 1.0 kHz ± 10%
Voltage: 1.0Vrms ± .2V
For Cap > 10 μF, 0.5Vrms @ 120Hz
Charge device with rated voltage for
120 ± 5 secs @ room temp/humidity
Charge device with 300% of rated voltage for
1-5 seconds, w/charge and discharge current
limited to 50 mA (max)
Deflection: 2mm
Test Time: 30 seconds
1mm/sec
Insulation Resistance
Dielectric Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Resistance to
Flexure
Stresses
Solderability
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Appearance
Capacitance
Variation
Dissipation
Factor
Insulation
Resistance
Dielectric
Strength
Dip device in eutectic solder at 230 ± 5ºC
for 5.0 ± 0.5 seconds
Resistance to
Solder Heat
Thermal
Shock
Load Life
Repeat for 5 cycles and measure after
24 ± 2 hours at room temperature
Charge device with 1.5X rated voltage in
test chamber set at 85ºC ± 2ºC for 1000 hours
(+48, -0). Note: Contact factory for *optional
specification part numbers that are tested at
< 1.5X rated voltage.
Remove from test chamber and stabilize
at room temperature for 24 ± 2 hours
before measuring.
Store in a test chamber set at 85ºC ± 2ºC/
85% ± 5% relative humidity for 1000 hours
(+48, -0) with rated voltage applied.
Remove from chamber and stabilize at
room temperature and humidity for
24 ± 2 hours before measuring.
Load
Humidity
24
Embedded System
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EEWORLD
