DPE8M656-70M datasheet, PDF - EEWORLD Datasheet

DPE8M656-70M: DescriptionEEPROM Module, 32KX8, 70ns, Parallel, CMOS; Categorystorage storage; File Size206KB，6 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPE8M656-70M Overview

EEPROM Module, 32KX8, 70ns, Parallel, CMOS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	B&B Electronics Manufacturing Company
package instruction	DIP, DIP40,.6
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	70 ns
Other features	DATA RETENTION = 10 YEARS; AUTOMATIC WRITE
Spare memory width	16
Data polling	YES
Data retention time - minimum	10
JESD-30 code	R-XDMA-T40
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	EEPROM MODULE
memory width	8
Number of functions	1
Number of terminals	40
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP40,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
page size	32 words
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.001 A
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
switch bit	NO
Base Number Matches	1

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