11AA080-E/MNY datasheet, PDF - EEWORLD Datasheet

11AA080-E/MNY: Description1K X 8 1-WIRE SERIAL EEPROM, PDSO3; Categorystorage; File Size22KB，1 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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11AA080-E/MNY Overview

1K X 8 1-WIRE SERIAL EEPROM, PDSO3

Parameter Name	Attribute value
Number of functions	1
Number of terminals	3
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	5.5 V
Minimum supply/operating voltage	2.5 V
Rated supply voltage	5 V
maximum clock frequency	1 MHz
Processing package description	ROHS COMPLIANT, PLASTIC, SOT-23, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	0.9500 mm
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Temperature level	INDUSTRIAL
memory width	8
organize	1K X 8
storage density	8192 deg
operating mode	SYNCHRONOUS
Number of digits	1024 words
Number of digits	1K
Memory IC type	1-WIRE SERIAL EEPROM
serial parallel	SERIAL
Maximum TWC of write cycle	10 ms

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