MPQ4558-AEC1
1A, 2MHz, 55V
Step-Down Converter
AEC-Q100 Qualified
DESCRIPTION
The MPQ4558 is a high-frequency, step-down
switching regulator with an integrated internal
high-side high-voltage power MOSFET. It
provides up to a 1A output with current-mode
control for fast loop response and easy
compensation.
The wide 3.8V-to-55V input range accommodates
a variety of step-down applications, including
automotive input. A 12µA shutdown-mode supply
current makes it suitable for battery-powered
applications.
A scaled-down switching frequency in light-load
conditions provides high power-conversion
efficiency over a wide load range while reducing
switching and gate driver losses.
The frequency fold-back prevents inductor current
runaway during startup and thermal shutdown
provides reliable, fault-tolerant operation.
By switching at 2MHz, the MPQ4558 can prevent
EMI
(electromagnetic
interference)
noise
problems, such as those found in AM radio and
ADSL applications.
The MPQ4558 is available in an SOIC8E and a
10-pin 3mm x 3mm QFN package.
FEATURES
Guaranteed Industrial/Automotive
Temperature Range Limits
Wide 3.8V-to-55V Operating Input Range
250mΩ Internal Power MOSFET
Up to 2MHz Programmable Switching
Frequency
140μA Quiescent Current
Stable with Ceramic Capacitors
Internal Soft-Start
Up to 95% Efficiency
Output Adjustable from 0.8V to 52V
Available in SOIC8E and 3mm x 3mm
QFN10 Packages
Available in AEC-Q100 Grade 1
APPLICATIONS
High-Voltage Power Conversion
Automotive Systems
Industrial Power Systems
Distributed Power Systems
Battery Powered Systems
All MPS parts are lead-free and adhere to the RoHS directive. For MPS green
status, please visit MPS website under Products, Quality Assurance page.
“MPS” and “The Future of Analog IC Technology” are Registered Trademarks of
Monolithic Power Systems, Inc.
TYPICAL APPLICATION
MPQ4558 Rev. 1.01
www.MonolithicPower.com
5/24/2016
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
1
MPQ4558 – 1A, 2MHz, 55V STEP-DOWN CONVERTER, AEC-Q100 QUALIFIED
ORDERING INFORMATION
Part Number
MPQ4558DN*
MPQ4558DQ**
MPQ4558DQ-AEC1***
Package
SOIC8E
QFN10 (3 x 3mm)
QFN10 (3 x 3mm)
Top Marking
MP4558DN
ABP
ABP
Junction Temperature (T
J
)
-40°C to +125°C
* For Tape & Reel, add suffix –Z (e.g. MPQ4558DN–Z)
For RoHS Compliant Packaging, add suffix –LF, (e.g. MPQ4558DN–LF–Z)
** For Tape & Reel, add suffix –Z (e.g. MPQ4558DQ–Z)
For RoHS Compliant Packaging, add suffix –LF, (e.g. MPQ4558DQ–LF–Z)
***Available End Sept. 2011
PACKAGE REFERENCE
SOIC8E
QFN10 (3mm x 3mm)
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage (V
IN
).................... –0.3V to +60V
Switch Voltage (V
SW
)......... –0.5V to (V
IN
+ 0.5V)
BST to SW .................................... –0.3V to +5V
All Other Pins ................................ –0.3V to +5V
Continuous Power Dissipation
(T
J
= +25°C)
(2)
SOIC8E……………………………………….2.5W
QFN10………………………………………. 2.5W
Junction Temperature .............................. 150°C
Lead Temperature ................................... 260°C
Storage Temperature .............. –65°C to +150°C
Thermal Resistance
(4)
θ
JA
θ
JC
SOIC8E .................................. 50 ...... 10 ... °C/W
QFN10(3mm x 3mm) .............. 50 ...... 12 ... °C/W
Notes:
1) Exceeding these ratings may damage the device
2) The maximum allowable power dissipation is a function of the
maximum junction temperature T
J
(MAX), the junction-to-
ambient thermal resistance θ
JA
, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by P
D
(MAX)=(T
J
(MAX)-
T
A
)/ θ
JA
. Exceeding the maximum allowable power dissipation
will cause excessive die temperature, and the regulator will go
into thermal shutdown. Internal thermal shutdown circuitry
protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7 4-layer board.
Recommended Operating Conditions
(3)
Supply Voltage V
IN
.......................... 3.8V to 55V
Output Voltage V
OUT
........................ 0.8V to 52V
Maximum Junction Temp. (T
J
) ............... 125°C
MPQ4558 Rev. 1.01
www.MonolithicPower.com
5/24/2016
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
2
MPQ4558 – 1A, 2MHz, 55V STEP-DOWN CONVERTER, AEC-Q100 QUALIFIED
ELECTRICAL CHARACTERISTICS
V
IN
= 12V, V
EN
= 2.5V, V
COMP
= 1.4V, T
J
= –40°C to +125°C. Typical Values are at T
J
=25°C, unless
otherwise noted.
Parameter
Feedback Voltage
Feedback Leakage Current
Upper Switch On Resistance
Upper Switch Leakage
Current Limit
COMP to Current Sense
Transconductance
Error Amp Voltage Gain
Error Amp Transconductance
Error Amp Min Source current
Error Amp Min Sink current
VIN UVLO Threshold
VIN UVLO Hysteresis
(5)
Soft-Start Time
Oscillator Frequency
Shutdown Supply Current
Quiescent Supply Current
Thermal Shutdown
Minimum Off Time
(5)
Minimum On Time
EN Rising Threshold
EN Threshold Hysteresis
Notes:
5) Derived from bench characterization. Not tested in production..
(5)
Symbol Condition
V
FB
I
FB
R
DS(ON)
I
SW
I
LIM
G
CS
I
COMP
= ±3µA
V
FB
= 0.7V
V
FB
= 0.9V
T
J
=25°C
V
BST
– V
SW
= 5V
T
J
=25°C
T
J
=25°C
4.5V < V
IN
< 55V -40°C≤T
J
≤85°C
-40°C≤T
J
≤125°C
Min
0.780
0.772
0.766
175
160
1.3
1.1
Typ
0.800
0.1
250
1
1.9
5.7
400
120
10
-10
3.0
0.35
0.5
1
12
140
150
100
100
1.55
320
Max
0.820
0.829
0.829
1.0
330
400
3.5
3.7
Units
V
μA
mΩ
μA
A
A/V
V/V
µA/V
µA
µA
V
V
ms
MHz
µA
µA
°C
ns
ns
V
mV
V
EN
= 0V, V
SW
= 0V
T
J
=25°C
Duty cycle ≤60%
2.7
2.4
0.19
0.8
0.7
3.3
3.6
0V < V
FB
< 0.8V
f
SW
I
S
I
Q
t
OFF
t
ON
T
J
=25°C
R
FREQ
= 95kΩ
T
J
=25°C
V
EN
< 0.3V
No load, V
FB
= 0.9V (no switching)
Hysteresis = 20°C
1.2
1.3
20
200
1.4
1.3
1.7
1.8
MPQ4558 Rev. 1.01
www.MonolithicPower.com
5/24/2016
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
3
MPQ4558 – 1A, 2MHz, 55V STEP-DOWN CONVERTER, AEC-Q100 QUALIFIED
PIN FUNCTIONS
SOIC8
Pin #
1
2
3
4
QFN10
Pin#
1, 2
3
4
5
Name
SW
Description
5
6
7
8
6
7
8, 9
10
Switch Node. Output of the high-side switch. Requires a low V
F
Schottky rectifier
to ground. Place the rectifier close to the SW pins to reduce switching spikes.
Enable Input. Pull this pin below the specified threshold to shut the chip down. Pull
EN
it above the specified threshold or leaving it floating to enable the chip.
Compensation. GM error amplifier output. Apply control-loop frequency
COMP
compensation to this pin.
Feedback. Input to the error amplifier. Connect an external resistive divider
FB
between the output and GND: Compare to the internal +0.8V reference to set the
regulation voltage.
GND, Ground. Connect as close as possible to the output capacitor and avoid high-
Exposed current switching paths. Connect the exposed pad to GND plane for optimal
pad
thermal performance.
Switching Frequency Program Input. Connect a resistor from this pin to ground to
FREQ
set the switching frequency.
Input Supply. Supplies power to all the internal control circuitry, both BS
VIN
regulators, and the high-side switch. Place a decoupling capacitor to ground close
to this pin to minimize switching spikes.
BST
Bootstrap. Positive power supply for the internal floating high-side MOSFET driver.
Connect a bypass capacitor between this pin and the SW pin.
MPQ4558 Rev. 1.01
www.MonolithicPower.com
5/24/2016
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
4
MPQ4558 – 1A, 2MHz, 55V STEP-DOWN CONVERTER, AEC-Q100 QUALIFIED
TYPICAL CHARACTERISTICS
MPQ4558 Rev. 1.01
www.MonolithicPower.com
5/24/2016
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2016 MPS. All Rights Reserved.
5
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