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BS616LV1012EIG55

Description
Standard SRAM, 64KX16, 55ns, CMOS, PDSO44, TSOP2-44
Categorystorage    storage   
File Size258KB,9 Pages
ManufacturerBrilliance
Environmental Compliance  
Download Datasheet Parametric View All

BS616LV1012EIG55 Overview

Standard SRAM, 64KX16, 55ns, CMOS, PDSO44, TSOP2-44

BS616LV1012EIG55 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerBrilliance
package instructionTSOP2, TSOP44,.46,32
Reach Compliance Codeunknown
Maximum access time55 ns
Spare memory width8
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
length18.41 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals44
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current8e-7 A
Minimum standby current1.5 V
Maximum slew rate0.023 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
64K X 16 bit
DESCRIPTION
BS616LV1012
• Wide Vcc operation voltage : 2.4 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade : 22mA (@55ns) operating current
I- grade : 23mA (@55ns) operating current
C-grade : 17mA (@70ns) operating current
I- grade : 18mA (@70ns) operating current
0.4uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV1012 is a high performance, very low power CMOS Static
Random Access Memory organized as 65,536 words by 16 bits and
operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.4uA at 3V/25
o
C and maximum access time of 55ns at 3V/85
o
C.
Easy memory expansion is provided by an active LOW chip
enable(CE) and active LOW output enable(OE) and three-state output
drivers.
The BS616LV1012 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1012 is available in the JEDEC standard 44-pin TSOP
Type II and 48-pin BGA package.
PRODUCT FAMILY
PRODUCT
FAMILY
BS616LV1012EC
BS616LV1012AC
BS616LV1012EI
BS616LV1012AI
OPERATING
TEMPERATURE
Vcc
RANGE
SPEED
(ns)
55ns:2.8~3.6V
70ns:2.5~3.6V
POWER DISSIPATION
STANDBY
Operating
(I
CCSB1
, Max)
(I
CC
, Max)
PKG TYPE
Vcc=3.0V
Vcc=3.0V
55ns
Vcc=3.0V
70ns
+0 C to +70 C
O
O
2.4V ~ 3.6V
55/70
1.3uA
22mA
17mA
TSOP2-44
BGA-48-0608
TSOP2-44
BGA-48-0608
-40 C to +85 C
O
O
2.4V ~ 3.6V
55/70
2.5uA
23mA
18mA
PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
6
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
BLOCK DIAGRAM
BS616LV1012EC
BS616LV1012EI
A8
A13
A15
A14
A12
A7
A6
A5
A4
Address
Input
Buffer
18
Row
Decoder
512
Memory Array
512 x 2048
2048
DQ0
16
Data
Input
Buffer
16
Column I/O
2
3
4
5
A
LB
OE
A0
A1
A2
NC
.
.
.
.
DQ15
.
.
.
.
Write Driver
Sense Amp
128
Column Decoder
16
Data
Output
16
Buffer
B
IO8
UB
A3
A4
CE
IO0
C
IO9
IO10
A5
A6
IO1
IO2
CE
WE
OE
UB
LB
Control
14
Address Input Buffer
D
VSS
IO11
NC
A7
IO3
VCC
E
VCC
IO12
NC
NC
IO4
VSS
A11 A9 A3 A2 A1 A0 A10
F
IO14
IO13
A14
A15
IO5
IO6
Vcc
Gnd
G
IO15
NC
A12
A13
WE
IO7
H
NC
A8
A9
A10
A11
NC
Brilliance Semiconductor, Inc
.
reserves the right to modify document contents without notice.
R0201-BS616LV1012
1
Revision 1.0
Apr.
2004
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