ZS1012U-T datasheet, PDF - EEWORLD Datasheet

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ZS1012U-T: DescriptionTrans Voltage Suppressor Diode, 1200W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, SMD, 2 PIN; CategoryDiscrete semiconductor diode; File Size55KB，1 Pages; ManufacturerSemitec

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Trans Voltage Suppressor Diode, 1200W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, SMD, 2 PIN

ZS1012U-T Parametric

Parameter Name	Attribute value
Maker	Semitec
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum breakdown voltage	13.2 V
Minimum breakdown voltage	10.8 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	1200 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	9.72 V
surface mount	YES
technology	AVALANCHE
Terminal form	C BEND
Terminal location	DUAL
Base Number Matches	1

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SMD VRD

Part number

Dimensions

Marking

Symbol Mark

1.5 0.2

2.5 0.2

Symbol Mark

S Mark

ZS 1 033 D - T

Taping

Nil

Bi-Polar

Uni-Polar

High-Reverse voltage type

Break down voltage

Steady state power

SMD type

1.2 0.2

0.1 max.

4.3 0.2

2.0 0.3

012

5AA

ZS type

Part No.

Lot No.

012

5AA

ZS-U type

S Mark

Cathode

Mark

Part No.

Lot No.

012

5AA

ZS-D type

S Mark

Cathode

Mark

Part No.

Lot No.

4.7 0.3

1.2 0.2

0.2

Unit(mm)

Taping

Maximum Rating

career tape

Dimension of reel

Steady state power

dissipation

1.0W

cover tape

300W(10/1000 s)

Peak pulse power

1200W(1.2/50 s)

2000W(8/20 s)

Storage temp. range

40 150 C

W W

Minimum quantity

1500 / reel

3.0

0.1

4.0

0.1

2.0

0.1

4.0

0.1

1.5

0.1

1.5

0.2

178

2.0

1.0

0.5

0.8

2.0

0.5

14.0

1.5

0.5

1.0

5.2 12.0

0.1

0.3

5.5

1.75

0.05

0.1

0.3

(2.6)

0.05

Unit (mm)

(1.0)

Unit (mm)

Specifications

ZS type

Breakdown

voltage

Part No.

It 1mA

12(10.8 13.2)

15(13.5 16.5)

18(16.2 19.8)

22(19.8 24.2)

27(24.3 29.7)

33(29.7 36.3)

39(35.1 42.9)

47(42.3 51.7)

Stand-off

voltage

D.C.

9.72

12.1

14.5

17.8

21.8

26.8

31.6

38.1

Maximum

leakage

current

max

Maximum clamping voltage &

Maximum peak pulse current

max/I

10/1000 s

17.3

22.0

26.5

31.9

39.1

47.7

56.4

67.8

17.3

13.6

11.3

9.40

7.67

6.29

5.32

4.42

22.4

28.5

34.4

41.4

50.7

61.8

73.1

88.0

8/20 s

89.3

70.2

58.1

48.3

39.4

32.4

27.4

22.7

25 C 50 C

%/ C

0.066

0.075

0.079

0.082

0.085

0.087

0.090

0.092

Temperature

coefficient

Capacitance

(TYP)

551

465

376

299

248

198

164

137

ZS1012

ZS1015

ZS1018

ZS1022

ZS1027

ZS1033

ZS1039

ZS1047

ZS-U type

Breakdown

voltage

Part No.

It 1mA

12(10.8 13.2)

15(13.5 16.5)

18(16.2 19.8)

22(19.8 24.2)

27(24.3 29.7)

33(29.7 36.3)

39(35.1 42.9)

47(42.3 51.7)

Stand-off

voltage

D.C.

9.72

12.1

14.5

17.8

21.8

26.8

31.6

38.1

Maximum

leakage

current

max

Maximum clamping voltage &

Maximum peak pulse current

max/I

10/1000 s

17.3

22.0

26.5

31.9

39.1

47.7

56.4

67.8

17.3

13.6

11.3

9.40

7.67

6.29

5.32

4.42

22.4

28.5

34.4

41.4

50.7

61.8

73.1

88.0

8/20 s

89.3

70.2

58.1

48.3

39.4

32.4

27.4

22.7

25 C 50 C

%/ C

0.066

0.075

0.079

0.082

0.085

0.087

0.090

0.092

Temperature

coefficient

Capacitance

(TYP)

1,102

929

751

598

497

395

328

274

ZS1012U

ZS1015U

ZS1018U

ZS1022U

ZS1027U

ZS1033U

ZS1039U

ZS1047U

ZS-D type

Breakdown

voltage

Part No.

It 1mA

12(10.8 13.2)

15(13.5 16.5)

18(16.2 19.8)

22(19.8 24.2)

27(24.3 29.7)

33(29.7 36.3)

39(35.1 42.9)

47(42.3 51.7)

Stand-off

voltage

D.C.

9.72

12.1

14.5

17.8

21.8

26.8

31.6

38.1

Maximum

leakage

current

max

Maximum clamping voltage &

Maximum peak pulse current

max/I

10/1000 s

17.3

22.0

26.5

31.9

39.1

47.7

56.4

67.8

17.3

13.6

11.3

9.40

7.67

6.29

5.32

4.42

22.4

28.5

34.4

41.4

50.7

61.8

73.1

88.0

8/20 s

89.3

70.2

58.1

48.3

39.4

32.4

27.4

22.7

25 C 50 C

%/ C

0.066

0.075

0.079

0.082

0.085

0.087

0.090

0.092

Temperature

coefficient

Capacitance

(TYP)

30.2

29.1

28.2

27.3

26.4

25.5

24.8

24.0

ZS1012D

ZS1015D

ZS1018D

ZS1022D

ZS1027D

ZS1033D

ZS1039D

ZS1047D

ZS1012U-T Related Products

	ZS1012U-T	ZS1012-T	ZS1012D-T
Description	Trans Voltage Suppressor Diode, 1200W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, SMD, 2 PIN	Trans Voltage Suppressor Diode, 1200W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, SMD, 2 PIN	Trans Voltage Suppressor Diode, 1200W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, SMD, 2 PIN
Maker	Semitec	Semitec	Semitec
package instruction	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Contacts	2	2	2
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum breakdown voltage	13.2 V	13.2 V	13.2 V
Minimum breakdown voltage	10.8 V	10.8 V	10.8 V
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	1200 W	1200 W	1200 W
Number of components	1	1	1
Number of terminals	2	2	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
polarity	UNIDIRECTIONAL	BIDIRECTIONAL	UNIDIRECTIONAL
Maximum power dissipation	1 W	1 W	1 W
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	9.72 V	9.72 V	9.72 V
surface mount	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL
Base Number Matches	1	1	1

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