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T80F11BFB

Description
Silicon Controlled Rectifier, 200A I(T)RMS, 80000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size46KB,1 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

T80F11BFB Overview

Silicon Controlled Rectifier, 200A I(T)RMS, 80000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,

T80F11BFB Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Other featuresFAST
Shell connectionANODE
Nominal circuit commutation break time25 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage50 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2 V
Maximum holding current250 mA
JESD-30 codeO-MUPM-H3
Maximum leakage current30 mA
On-state non-repetitive peak current2500 A
Number of components1
Number of terminals3
Maximum on-state current80000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum rms on-state current200 A
Off-state repetitive peak voltage1100 V
Repeated peak reverse voltage1100 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Trigger device typeSCR
Base Number Matches1

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