DSA20C150PN
preliminary
Schottky Diode Gen ²
V
RRM
I
FAV
V
F
=
= 2x
=
150 V
10 A
0.73 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA20C150PN
Backside: isolated
1
2
3
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
TO-220FP
●
Isolation Voltage: 2500 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Base plate: Plastic overmolded tab
●
Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
© 2013 IXYS all rights reserved
DSA20C150PN
preliminary
Schottky
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.54
11.4
4.5
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
=
24 V f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25°C
53
35
220
V
mΩ
K/W
K/W
W
A
pF
min.
typ.
max. non-repetitive reverse blocking voltage
max.
150
150
200
2
0.87
0.98
0.73
0.85
10
Unit
V
V
µA
mA
V
V
V
V
A
V
R
= 150 V
V
R
= 150 V
I
F
=
I
F
=
I
F
=
I
F
=
10 A
20 A
10 A
20 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
average forward current
T
C
= 140°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
© 2013 IXYS all rights reserved
DSA20C150PN
preliminary
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
mounting torque
mounting force with clip
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
TO-220FP
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
mm
mm
V
V
2
0.4
20
1.6
2.5
1.0
2.5
2500
2080
0.6
60
Product Marking
Part number
D
S
A
20
C
150
PN
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-220ABFP (3)
Part Number
Logo
DateCode
Assembly Code
Assembly Line
abcdef
YYWW Z
XXXXXX
Ordering
Standard
Part Number
DSA20C150PN
Marking on Product
DSA20C150PN
Delivery Mode
Tube
Quantity
50
Code No.
503682
Similar Part
DSA20C150PB
Package
TO-220AB (3)
Voltage class
150
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Schottky
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.54
8.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
© 2013 IXYS all rights reserved
DSA20C150PN
preliminary
Outlines TO-220FP
E
Q
ØP
A
A1
H
D
Dim.
1 2 3
L1
A2
L
b1
e
b
c
A
A1
A2
b
c
D
E
e
H
L
L1
ØP
Q
Millimeters
min
max
4.50
4.90
2.34
2.74
2.56
2.96
0.70
0.90
0.45
0.60
15.67 16.07
9.96 10.36
2.54 BSC
6.48
6.88
12.68 13.28
3.03
3.43
3.08
3.28
3.20
3.40
Inches
min
max
0.177 0.193
0.092 0.108
0.101 0.117
0.028 0.035
0.018 0.024
0.617 0.633
0.392 0.408
0.100 BSC
0.255 0.271
0.499 0.523
0.119 0.135
0.121 0.129
0.126 0.134
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131031a
© 2013 IXYS all rights reserved
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