BUZ334 datasheet, PDF - EEWORLD Datasheet

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BUZ334: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size26KB，2 Pages; ManufacturerSemiconductor Technology Inc

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BUZ334 Overview

Transistor

BUZ334 Parametric

Parameter Name	Attribute value
Maker	Semiconductor Technology Inc
package instruction	,
Reach Compliance Code	compliant
Base Number Matches	1

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PRODUCT SPECIFICATIONS

SEMICONDUCTOR TECHNOLOGY, INC.

3131 S. E. JAY STREET, STUART, FL 34997

PH: (561) 283-4500 FAX: (561) 286-8914

Website: http://www.semi-tech-inc.com

CASE OUTLINE: TO-218AA

TYPE: BUZ334

HIGH VOLTAGE POWER MOSFET

N-CHANNEL

ABSOLUTE MAXIMUM RATING:

Drain – Source Voltage

Drain – Gate Voltage

Drain Current – Continuous

Drain Current – Pulsed

Gate – Source Voltage

Power Dissipation

Inductive Current

Operating and Storage Temperature

Lead Temperature From Case

ELECTRICAL CHARACTERISTICS TA @ 25°C

Parameters

Symbol

Test Conditions

Drain Source

BVDSS V

= 0V, I

= 0.25mA

Breakdown Voltage

Gate Threshold Voltage VGS(th) V

= V

, I

= 1.0mA

Gate – Body Leakage

Current

Zero Gate Voltage

Drain Current

On State Drain Current

Drain Source On-

Resistance

Forward

Transconductance

Drain-Source On

Voltage

Drain-Source-On

Voltage

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

IGSS

IDSS

ID(on)

rDS(on)

gFS

VDS(on)

Ciss

Coss

Crss

= 0V, V

= 25V, f = 1 MHz

3325

450

150

= 10V, I

= 7.5A

≥2V

= I

= R

DS(ON)MAX

, I

= 7.5A

8.0

0.5

= 20V, V

= 0V

= 600V, V

= 0V,

= 600V, V

= 0V, T

= 125°C

VDSS

VDGR

IDM

VGS

TJ & Tstg

600

±20

180

-55 to +150

Vdc

Adc

Vdc

Watts

Adc

°C

Min

600

2.1

Typ

Max

Unit

Vdc

µA

Adc

Ohms

mhos

Vdc

4.0

100

1.0

100

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