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K6T2008U2A-YB85T

Description
Standard SRAM, 256KX8, 85ns, CMOS, PDSO32
Categorystorage    storage   
File Size192KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6T2008U2A-YB85T Overview

Standard SRAM, 256KX8, 85ns, CMOS, PDSO32

K6T2008U2A-YB85T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionTSSOP, TSSOP32,.56,20
Reach Compliance Codecompliant
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP32,.56,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
power supply3 V
Certification statusNot Qualified
Minimum standby current2 V
Maximum slew rate0.03 mA
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Base Number Matches1
K6T2008V2A, K6T2008U2A Family
Document Title
256Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
2.0
History
Design target
Finalize
Revised
- Add FBGA type package
Draft Data
May 26, 1998
October 8, 1998
July 21, 1999
Remark
Advance
Final
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
Revision 2.0
July 1999
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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