FT04...W
LOGIC LEVEL TRIAC
TO220-F
(FULLY ISOLATED CASE)
On-State Current
4 Amp
Gate Trigger Current
<
10 mA
Off-State Voltage
200 V ÷ 800 V
MT1
MT2
G
This series of
TRIACs
uses a high
per for mance PNPN technology.
MT2
G
MT1
These parts are intended for general
purpose AC switching applications
with highly inductive loads.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
RMS On-state Current (full sine wave)
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Average Gate Power Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Soldering Temperature
R.M.S. isolation voltage 50/60 Hz
sinusoidal waveform
10s max
CONDITIONS
All Conduction Angle, T
c
= 95 °C
Full Cycle, 60 Hz (t = 16.7 ms)
Full Cycle, 50 Hz (t = 20 ms)
tp = 10 ms, Half Cycle
20 µs max.
Tj = 125 °C
I
G
= 2x I
GT
, tr
£100ns
f = 120 Hz, Tj = 125 °C
Tj = 125 °C
Value
4
33
30
4.5
4
1
50
(-40 +125)
(-40 +150)
260
2.500
Unit
I
T(RMS)
I
TSM
I
TSM
I
2
t
I
GM
P
G(AV)
dl/dt
T
j
T
stg
T
sld
V
iso
A
A
A
A
2
s
A
W
A/µs
°C
°C
°C
Vac
SYMBOL
PARAMETER
Repetitive Peak Off State
Voltage
VOLTAGE
B
D
M
S
N
Unit
V
DRM
V
RRM
200
400
600
700
800
V
Apr - 05
FT04...W
LOGIC LEVEL TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
Quadrant
SENSITIVITY
04 05 07 08 09
5
5
Unit
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
Gate Trigger Current
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
V
D
= 12 V
DC
, R
L
= 33W,
T
j
= 25 °C
Q1÷Q3 MAX
5
Q4
MAX
V
D
= 12 V
DC
, R
L
= 33W,
T
j
= 25 °C
Q1÷Q3 MAX
Q1÷Q4 MAX
V
D
= V
DRM
, R
L
= 3.3 KW, T
j
= 125 °C
Q1÷Q3 MIN
5 10 10 mA
7
1.3
1.3
0.2
0.2
10 mA
V
V
V
V
Q1÷Q4 MIN
I
T
=100 mA, Gate open, T
j
= 25 °C
I
G
= 1.2 I
GT
, T
j
=
25 °C
Q1,Q3,Q4
MAX 10 10 15 15 20
mA
Q1,Q3 MAX 10
MAX
10 20
Q2
25
mA
20
mA
MAX 20 20 30 30 25
mA
MIN 20 20 20 40 40
V/µs
MIN 1.8 1.8 1.8 2.7 2.5
A/ms
MIN 0.9 0.9 0.9 2.0 1.5
A/ms
MIN
MAX
MAX
MAX
1.6
0.9
140
0.5
5
4.0
dV/dt
(2)
Critical Rate of Voltage Rise
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 °C
(dl/dt)c
(2)
Critical Rate of Current Rise
(dv/dt)c = 0.1 V/µs
(dv/dt)c = 10 V/µs
without snubber
V
TM (2)
V
t (o) (2)
r
d (2)
On-state Voltage
Threshold Voltage
Dynamic resistance
T
j
= 125 °C
T
j
= 125 °C
V
D
= V
DRM
,
V
R
= V
RRM
,
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
I
T
= 5.5 Amp, tp = 380 µs, T
j
= 25 °C
V
V
mW
mA
µA
°C/W
I
DRM
/I
RRM
Off-State Leakage Current
Thermal Resistance
Junction-Case
Thermal Resistance
Junction-Ambient
T
j
= 125 °C
T
j
= 25 °C
MAX
MAX
R
th(j-c)
R
th(j-a)
for AC 360° conduction angle
S = 1 cm
2
50
°C/W
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
F
FAGOR
TRIAC
CURRENT
T
04
08
B
W
00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Apr - 05
FT04...W
LOGIC LEVEL TRIAC
Fig. 1: Maximum power dissipation versus
RMS on-state current (full cycle)
P (W)
5
5
Fig. 2: RMS on-state current versus case
temperature (full cycle).
IT(RMS)(A)
4
4
Rth(j-a)=Rth(j-l)
3
3
2
360°
2
1
1
a
0
0
0.5
1
1.5
2
2.5
3
IT(RMS)(A)
3.5
0
Tamb (°C)
0
25
50
75
100
125
Fig. 3: Relative variation of thermal
impedance versus pulse duration.
K=[Zth / Rth]
1E+0
Zth(j-c)
Fig. 4: On-state characteristics (maximum
values)
20.0
10.0
ITM (A)
1E-1
Zth(j-a)
T
j
max
T
j
max
Vto = 0.90 V
Rd = 120 mW
1.0
T
j
initial = 25 °C
tp (s)
1E-2
1E-3 1E-2 1E-1 1E+0 1E+1 1E+25E+2
Fig. 5: Surge peak on-state current
versus number of cycles
I TSM (A)
50
40
30
T
j
initial = 25 °C
F = 50 Hz
0.1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VTM (V)
Fig. 6: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I
2
t.
ITSM(A). I
2
t (A
2
s)
100
T
j
initial = 25 °C
I
TSM
10
20
10
It
2
0
1
10
100
Number of cycles
1000
1
1
10
tp(ms)
Apr - 05
FT04...W
LOGIC LEVEL TRIAC
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
2.5
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25°C]
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature
6
5
I
GT
Fig. 9: Relative variation of critical rate
of decrease of main current versus
(dV/dt)c (typical values).
(dI/dt)c [Tj]/(dI/dc)c [Tj specified]
2.0
1.8
1.6
2.0
4
1.5
I
H
&I
L
1.4
1.2
1.0
0.8
3
2
1.0
0.5
1
0.6
Tj(°C)
0
25
50
75
100
125
0
-40 -20 0 20 40 60 80 100120140
Tj(°C)
(dV/dt)c (V/µS)
0
0.4
0.1
1.0
10.0
100.0
PACKAGE MECHANICAL DATA
TO220-F
A
H
Diam.
L6
L7
L3
L1
L
F2
F1
A
B
D
E
F
F1
F2
G
G1
H
L
L1
L3
L6
L7
Diam.
B
REF.
DIMENSIONS
Milimeters
Min.
Nominal
Max.
3.55
2.34
2.03
0.35
0.25
0.70
0.70
4.88
2.34
9.65
12.70
2.93
26.90
14.22
8.30
3.00
4.50
3.00
2.70
0.60
0.60
1.30
1.70
5.00
2.50
10.15
13.35
3.75
28.35
15.00
8.40
3.20
4.90
3.70
2.96
0.70
1.01
1.78
1.78
5.28
2.74
10.67
14.73
6.35
31.20
16.50
9.59
3.28
F
G1
G
D
E
Apr - 05
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
