DFG1D1 datasheet, PDF - EEWORLD Datasheet

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DFG1D1: Description1A, 100V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size53KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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DFG1D1 Overview

1A, 100V, SILICON, SIGNAL DIODE

DFG1D1 Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH SPEED SWITCH
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	E-LALF-W2
Number of components	1
Number of terminals	2
Maximum output current	1 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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FAST RECOVERY DIODE

DFG1D

FEATURES

•

For high speed switching.

•

Diffused-junction. Glass passivated and

encapsulated.

OUTLINE DRAWING

3.5 MAX

(0.14)

Unit in mm(inch)

Direction of polarity

0.8

(0.03)

62MIN. (2.44)

5MAX

(0.2)

DFG1D1 (100V)

DFG1D2 (200V)

DFG1D4 (400V)

Yellow

Black

Blue

Weight: 0.35 (g)

ABSOLUTE MAXIMUM RATINGS

Items

Repetitive Peak Reverse Voltage

Average Forward Current

Surge(Non-Repetitive) Forward Current

t Limit Value

Operating Junction Temperature

Storage Temperature

RRM

F(AV)

FSM

stg

Type

°C

DFG1D1

100

DFG1D2

200

29MIN.

(1.14)

Type

Color of

cathode band

DFG1D4

400

Single-phase half sine wave 180° conduction

1.0 TL = 75°C, Lead length = 10mm

(

30( Without PIV, 10ms conduction, Tj = 150°C start )

3.6( Time = 2 ~ 10ms, I = RMS value )

-65 ~ +150

Notes

(1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..

(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.

CHARACTERISTICS(T

=25°C)

Items

Peak Reverse Current

Peak Forward Voltage

Reverse Recovery Time

Steady State Thermal Impedance

Symbols

RRM

trr

th(j-a)

th(j-l)

Units

µA

°C/W

Min.

Typ.

Max.

1.5

Test Conditions

Rated V

RRM

=1.0Ap, Single-phase half sine

wave 1 cycle

=0.5A, I

=1.0A, 25% Recovery

Lead length = 10 mm

PDE-DFG1D-0

Symbol(Orange)

Cathode band

29MIN.

(1.14)

)

HITACHI POWER SEMICONDUCTORS

Notices

1.The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are adviced to contact Hitachi sales department for the latest version of this

data sheets.

2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure

before use.

3.In cases where extremely high reliability is required(such as use in nuclear power control,

aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel

control equipment and various kinds of safety equipment), safety should be ensured by

using semiconductor devices that feature assured safety or by means of users’ fail-safe

precautions or other arrangement. Or consult Hitachi’s sales department staff.

4.In no event shall Hitachi be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to this data sheets. Hitachi

assumes no responsibility for any intellectual property claims or any other problems that

may result from applications of information, products or circuits described in this data

sheets.

5.In no event shall Hitachi be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

6.No license is granted by this data sheets under any patents or other rights of any third

party or Hitachi, Ltd.

7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,

without the expressed written permission of Hitachi, Ltd.

8.The products (technologies) described in this data sheets are not to be provided to any

party whose purpose in their application will hinder maintenance of international peace

and safety not are they to be applied to that purpose by their direct purchasers or any

third party. When exporting these products (technologies), the necessary procedures are

to be taken in accordance with related laws and regulations.

For inquiries relating to the products, please contact nearest overseas representatives which is located

“Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

DFG1D1 Related Products

	DFG1D1	DFG1D2	DFG1D4
Description	1A, 100V, SILICON, SIGNAL DIODE	1 A, 200 V, SILICON, SIGNAL DIODE	1A, 400V, SILICON, SIGNAL DIODE
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Other features	HIGH SPEED SWITCH	HIGH SPEED SWITCH	HIGH SPEED SWITCH
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	E-LALF-W2	E-LALF-W2	E-LALF-W2
Number of components	1	1	1
Number of terminals	2	2	2
Maximum output current	1 A	1 A	1 A
Package body material	GLASS	GLASS	GLASS
Package shape	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL
Package form	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	100 V	200 V	400 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1

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