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DH50209-54

Description
200V, SILICON, PIN DIODE, SOT-23, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerRakon Limited
Download Datasheet Parametric View All

DH50209-54 Overview

200V, SILICON, PIN DIODE, SOT-23, PLASTIC PACKAGE-3

DH50209-54 Parametric

Parameter NameAttribute value
MakerRakon Limited
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
applicationSWITCHING
Minimum breakdown voltage200 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Maximum diode capacitance1.2 pF
Diode component materialsSILICON
Maximum diode forward resistance0.6 Ω
Diode typePIN DIODE
frequency bandS BAND
JESD-30 codeR-PDSO-G3
Minority carrier nominal lifetime1 µs
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
SILICON PIN DIODES
Plastic package Surface Mount switching silicon PIN diodes
PLASTIC PACKAGE SURFACE MOUNT SWITCHING
SILICON PIN DIODES
Description
TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.
This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.
Applications
The DH50XXX series PIN diodes are offered in a large selection of capacitance range (.3 pF to 1.2 pF)
and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching
time and low switching current.
TEMEX’ diodes are designed to cover a broad range of CW low power (up to 2 W), medium peak
power, RF and microwave applications (up to 3 GHz).
Main applications include: SPST and SPDT switches, antenna (Wireless Communication Systems)
and filter switches, phase shifters ....
Note:
To reduce the distortion, it is necessary to verify and design with the following formula:
Î
HF
πτ
l
I
DC
F
<< 1
Î
HF
:
RF peak current (A)
Diode minority carrier lifetime (s)
DC bias current (A)
Application frequency (Hz)
τ
l
:
I
DC
:
πF
:
12-6
Vol. 1
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.com
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