SiP809C/SiP810C
Vishay Siliconix
Microprocessor Reset Monitors
FEATURES
D
D
D
D
D
D
D
D
Tight Reset Voltage Tolerances
"1.5%
4 Reset Active Timeout Period Options
Low Quiescent Current:
t
3 A
6 Reset Threshold Options From 2.63 V to 4.63 V
Reset Output Guaranteed Down to 1.0 V
No External Components
V
CC
Transient immunity
Wide Temperature Range – 40_C to + 85_C
APPLICATIONS
D
Computers
D
Critical
mP/mC
Power Supply Monitoring
D
Battery Powered Equipment
DESCRIPTION
The SiP809C/SiP810C
are system supervisor
circuits
designed to monitor V
CC
in digital systems and provide a reset
signal to the host processor when necessary. No external
components are required.
When the processor power supply voltage drops below the
reset threshold, the reset output is driven active, in less than
40
ms
(T
D1
). Reset is maintained active for a time period (T
D2
),
after the V
cc
rises above the threshold voltage.
To prevent jitter, the reset threshold voltage has a built-in
hysteresis of 0.4% of V
TH
.
The SiP809C has an active-low RESET output, while the
SiP810C has an active-high reset output. Both devices have
push/pull output drives.
The reset signal is guaranteed valid, down to V
CC
= 1.0 V.
Low supply current of 3
mA
makes these devices well suited for
battery powered applications. They are designed to reject fast
transients from causing false resets.
Both devices are available in a space-saving SOT-23
package.
PACKAGING AND PIN DEFINITION
SOT-23
GND
1
3
RESET OUTPUT
2
V
CC
Top View
See page 2 for ordering and marking information.
TYPICAL APPLICATION CIRCUIT
V
CC
V
CC
V
CC
Processor
RESET
INPUT
GND
SiP809C
RESET
GND
Document Number: 71999
S-41772—Rev. B, 04-Oct-04
www.vishay.com
1
SiP809C/SiP810C
Vishay Siliconix
ORDERING INFORMATION
SiP809C/SiP810C xEU
xDT
TR1
Tape/Reel
Reset Voltage Options
L: 4.63 V
M: 4.38 V
J: 4.0 V
T: 3.08 V
S: 2.93 V
27: 2.7 V
R: 2.63 V
RESET Active High
RESET Active Low
Reset Timeout Period
Default: 210 mS
E: 150 mS
D: 30 mS
A: 1.5 mS
Please contact your local Vishay Semiconductor Sales Office for availability
of other threshold voltage options.
MARKING INFORMATION−SiP809C
SiP809CREUADT
SiP809C27EUADT
SiP809CSEUADT
SiP809CTEUADT
SiP809CJEUADT
SiP809CMEUADT
SiP809CLEUADT
SiP809CREUDDT
SiP809C27EUDDT
SiP809CSEEUDDT
SiP809CTEUDDT
SiP809CJEUDDT
SiP809CMEUDDT
SiP809CLEUDDT
SiP809CREUEDT
SiP809C27EUEDT
SiP809CSEUEDT
SiP809CTEUEDT
SiP809CJEUEDT
SiP809CMEUEDT
SiP809CLEUEDT
SiP809CREUDT
SiP809C27EUDT
SiP809CSEUDT
SiP809CTEUDT
SiP809CJEUDT
SiP809CMEUDT
SiP809CCLEUDT
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DIxxx
DKxxx
DLxxx
DMxxx
DNxxx
DOxxx
DPxxx
DSxxx
DTxxx
DVxxx
DWxxx
DXxxx
DYxxx
DZxxx
EBxxx
ECxxx
EDxxx
EExxx
EGxxx
EHxxx
EIxxx
ELxxx
EMxxx
ENxxx
EOxxx
EPxxx
ERxxx
ESxxx
MARKING INFORMATION−SiP810C
SiP810CREUADT
SiP810C27EUADT
SiP810CSEUADT
SiP810CTEUADT
SiP810CJEUADT
SiP810CMEUADT
SiP810CLEUADT
SiP810CREUDDT
SiP810C27EUDDT
SiP810CSEUDDT
SiP810CTEUDDT
SiP810CJEUDDT
SiP810CMEUDDT
SiP810CLEUDDT
SiP810CREUEDT
SiP810C27EUEDT
SiP810CSEUEDT
SiP810CTEUEDT
SiP810CJEUEDT
SiP810CMEUEDT
SiP810CLEUDT
SiP810CREUDT
SiP810C27EUDT
SiP810CSEUDT
SiP810CTEUDT
SiP810CJEUDT
SiP810CMEUDT
SiP810CLEUDT
EVxxx
EWxxx
EXxxx
EYxxx
EZxxx
FAxxx
FBxxx
FDxxx
FExxx
FGxxx
FHxxx
FIxxx
FKxxx
FLxxx
FNxxx
FOxxx
FPxxx
FRxxx
FSxxx
FTxxx
FVxxx
FXxxx
FYxxx
FZxxx
GAxxx
GBxxx
GCxxx
GDxxx
Document Number: 71999
S-41772—Rev. B, 04-Oct-04
2
SiP809C/SiP810C
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Supply Voltage
RESET/RESET
Input Current
Output Current, RESET/RESET
dv/dt
Operating Temperature Range
Storage Temperature Range
Power Dissipation (T
A
v
70_C)
SOT-23 (Derate 4 mW/_C above 70_C)
T
A
T
stg
P
D
I
CC
Symbol
V
CC
Limit
6.0
−0.3
to (V
CC
+ 0.3)
20
20
100
−40
to 85
−65
to 150
260
Unit
V
mA
V/µS
_C
mW
SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Symbol
T
A
= 25_C
Limits
Min
a
1
Typ
b
Max
a
5.5
5.5
3.0
5.0
Unit
V
CC
Range
Supply Current
(Reset Not Active)
Reset Threshold
Threshold Hysteresis
Reset Threshold
Temperature Coefficient
Reset Output Voltage Low
V
RANGE
I
CC
V
TH
V
TH(hys)
T
A
=
−40_C
to 85_C
V
CC
= 3.0 V
V
CC
= 3.0 V, T
A
=
−40_C
to 85_C
1
V
mA
V
%V
TH
ppm/_C
V
TH(nom)
−1.5%
T
A
=
−40_C
to 85_C
V
TH(nom)
−2.0%
V
TH(nom)
V
TH(nom)
0.4
30
V
TH(nom)
+1.5%
V
TH(nom)
+2.0%
V
OL
T
A
=
−40_C
to 85_C, I
SINK
= 1.2 mA
SiP809C—V
CC
t
V
TH(min)
SiP810C—V
CC
u
V
TH(max)
T
A
=
−40_C
to 85_C, I
SOURCE
= 0.5 mA
SiP809C—V
CC
u
V
TH(max)
SiP810C—V
CC
t
V
TH(min)
V
CC
= V
TH
−
100 mV, T
A
=
−40_C
to 85_C
T
A
=
−40_C
to 85_C
T
D2(nom)
−35%
0.8 V
CC
40
T
D2(nom)
0.5
V
Reset Output Voltage High
V
CC
to Reset Delay
Reset Timeout Period
V
OH
T
D1
T
D2
mS
T
D2(nom)
+35%
mS
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed or subject to production testing.
Document Number: 71999
S-41772—Rev. B, 04-Oct-04
www.vishay.com
3
SiP809C/SiP810C
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C Unless Otherwise Noted)
V
TH
V
TH
V
CC
T
D2
RESET
50%
T
D1
50%
T
D2
RESET
50%
T
D1
50%
These devices have a cer tain immunity to fast negative going
transients. The graph titled “Transient Rejection” shows the
maximum allowable transient amplitude and duration to avoid
triggering an unintended reset. As shown in the graph shorter
transients can have larger amplitudes without triggering
resets.
Transient Rejection
140
120
220
215
Reset Time vs. Temperature
Transient Duration (mS)
80
60
40
20
0
Reset Time (mS)
100
SiP809CREU
210
205
200
195
190
0.01
0.1
1
−50
−20
10
40
70
100
130
Transient Amplitude
Temperature (_C)
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Document Number: 71999
S-41772—Rev. B, 04-Oct-04
SiP809C/SiP810C
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C Unless Otherwise Noted)
2.35
I
CC
vs. Temperature
2.650
2.648
Reset V
TH
vs. Temperature
Supply Current @ 5 V (mA)
2.30
2.646
2.644
2.25
SiP809CREU
2.20
Reset V
TH
(v)
2.642
2.640
2.638
2.636
SiP809CREU
2.15
2.634
2.632
2.10
−50
−20
10
40
70
100
130
2.630
−50
−20
10
40
70
100
130
Temperature (_C)
Temperature (_C)
2
I
CC
vs. V
CC
43
42
T
D1
Delay vs. Temperature
1.6
85_C
40_C
I
CC
(mA)
1.2
0_C
T
D1
Delay (mS)
41
40
39
38
37
−40
0.8
0.4
0
0
1
2
3
4
5
−20
0
20
40
60
80
100
V
cc
(V)
Temperature (_C)
Threshold Hysteresis vs. Temperature
0.5
0.265
0.260
Reset V
OL
vs. Temperature
Reset V
OL
@ 0.8 mA (V)
0.4
Hysteresis (% of V
TH
)
0.255
0.250
0.245
0.240
0.235
0.230
0.225
SiP809CREU
0.3
0.2
0.1
0
−40
−20
0
20
40
60
80
100
0.220
−50
−20
10
40
70
100
130
Temperature (_C)
Document Number: 71999
S-41772—Rev. B, 04-Oct-04
Temperature (_C)
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