MPF481 datasheet, PDF - EEWORLD Datasheet

MPF481: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size38KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MPF481 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	0.01 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	MPF481	IRFF9123
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Transistor
Is it Rohs certified?	incompatible	incompatible
Reach Compliance Code	unknown	unknown
Configuration	Single	Single
Maximum drain current (Abs) (ID)	0.01 A	3.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.35 W	20 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Base Number Matches	1	1

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