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BAT64...B5000 / B5003
Silicon Schottky Diodes
•
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
•
Integrated diffused guard ring
•
Low forward voltage
•
Improved operating temperature range
due to extra-low thermal resistance
(see attached Forward current curves)
•
High volume packing size:
B5000: 9 x 10k reels, B5003: 10 x 3k reels
•
Not for automotive applications*
BAT64
3
BAT64-04
3
BAT64-05
3
BAT64-06
3
D 1
D 2
D 1
D 2
D 1
D 2
1
2
1
2
1
2
1
2
Type
BAT64
BAT64-04
BAT64-05
BAT64-06
Package
SOT23
SOT23
SOT23
SOT23
Configuration
single
series
common cathode
common anode
L
S
(nH)
1.8
1.8
1.8
1.8
Marking
63s
64s
65s
66s
* Automotive qualification ongoing
1
2006-08-04
BAT64...B5000 / B5003
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
(t
≤
10ms)
Average rectified forward current (50/60Hz, sinus)
I
FAV
Total power dissipation
BAT64 , T
s
≤ 122°C
BAT64-04, BAT64-06, T
s
≤ 115°C
BAT64-05, T
s
≤ 109°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAT64
BAT64-04, BAT64-06
BAT64-05
Symbol
R
thJS
≤
110
≤ 140
≤ 165
Symbol
V
R
I
F
I
FSM
Value
40
250
800
120
Unit
V
mA
P
tot
250
250
250
T
j
T
stg
150
-55 ... 150
mW
°C
Value
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
1
For
Unit
max.
-
-
2
200
-
350
430
520
750
mV
V
µA
typ.
-
-
-
-
-
320
385
440
570
V
(BR)
I
R
40
-
-
-
V
F
-
270
310
370
500
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2006-08-04
DSP and ARM Processors
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