SST36WF3203-55-5E-B3K datasheet, PDF

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SST36WF3203-55-5E-B3K: DescriptionFlash, 2MX16, 55ns, PBGA48, 6 X 8 MM, TFBGA-48; Categorystorage storage; File Size722KB，22 Pages; ManufacturerSilicon Laboratories Inc

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SST36WF3203-55-5E-B3K Overview

Flash, 2MX16, 55ns, PBGA48, 6 X 8 MM, TFBGA-48

SST36WF3203-55-5E-B3K Parametric

Parameter Name	Attribute value
Maker	Silicon Laboratories Inc
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	55 ns
JESD-30 code	R-PBGA-B48
length	8 mm
memory density	33554432 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.85 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	6 mm
Base Number Matches	1

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32 Mbit (2M x16) Concurrent SuperFlash

SST36WF3203

SST36WF32031.65V 32Mb (x16) Concurrent SuperFlash

Advance Information

FEATURES:

• Organized as 2M x16

• Dual Bank Architecture for Concurrent

Read-While-Write Operation

• Single 1.65-1.95V for

Read-While-Write Operations

• Superior Reliability

– Endurance: 1,000,000 cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption (typical):

– Active Read Current: 40 mA

– Standby Current: 3 µA

– Auto Low Power Mode: 3 µA

• Small Sector-Erase Capability

– Uniform 2 KWord sectors (1024 sectors)

• Block-Erase Capability

– Uniform 32 KWord overlay blocks (64 blocks)

• Fast Read Access Time

– 55 ns

• Latched Address and Data

• Fast Erase and Word-Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 70 ms

– Word-Program Time: 14 µs

– Chip Rewrite Time: 30 sec

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• Hardware Reset pin (RST#)

– Resets the internal state machine to reading

array data

• CMOS I/O Compatibility

• Packages Available

– 48-ball TFBGA (6mm x 8mm)

PRODUCT DESCRIPTION

The SST36WF3203 device is 2M x16 CMOS Concur-

rent Read/Write Flash Memory manufactured with

SST’s proprietary, high performance CMOS SuperFlash

technology. The split-gate cell design and thick oxide

tunneling injector attain better reliability and manufac-

turability compared with alternate approaches. The

SST36WF3203 operates with a single 1.65-1.95V

power supply for Read-While-Write operations.

The SST36WF3203 features dual flash memory bank

architecture allowing for concurrent operations between the

two flash memory banks. The devices can read data from

either bank while an Erase or Program operation is in

progress in the opposite bank. The two flash memory

banks are partitioned into 2 KWord sectors (1024 sectors)

and 32 KWord overlay blocks (64 blocks). See Table 1 for

SST36WF3203 memory organization.

Featuring high performance Word-Program, the

SST36WF3203 device provides a typical Word-Program

time of 14 µsec. The entire memory can typically be erased

and programmed word-by-word in 30 seconds, when using

interface features such as Toggle Bit or Data# polling to

indicate the completion of the Program or Erase operation.

To protect against inadvertent write, the SST36WF3203

has an on-chip Software Data Protection scheme. The

SST36WF3203 is offered with a typical endurance of

1,000,000 cycles. Data retention is rated at greater than

100 years.

TABLE 1: SST36WF3203 M

EMORY

RGANIZATION

Memory Size

Part #

SST36WF3203

Bank 1

16 Mbit

Bank 2

16 Mbit

Bank 1

000000H - 0FFFFFH

Address Range

Bank 2

100000H - 1FFFFFH

Sector Size

2 KWord

Block Size

32 KWord

T1.1 377

S71158-02-000 2/02

377

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

Concurrent SuperFlash and CSF are trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

SST36WF3203-55-5E-B3K Related Products

	SST36WF3203-55-5E-B3K	SST36WF3203-55-5C-B3K
Description	Flash, 2MX16, 55ns, PBGA48, 6 X 8 MM, TFBGA-48	Flash, 2MX16, 55ns, PBGA48, 6 X 8 MM, TFBGA-48
Maker	Silicon Laboratories Inc	Silicon Laboratories Inc
Parts packaging code	BGA	BGA
package instruction	TFBGA,	TFBGA,
Contacts	48	48
Reach Compliance Code	unknown	unknown
ECCN code	3A991.B.1.A	3A991.B.1.A
Maximum access time	55 ns	55 ns
JESD-30 code	R-PBGA-B48	R-PBGA-B48
length	8 mm	8 mm
memory density	33554432 bit	33554432 bit
Memory IC Type	FLASH	FLASH
memory width	16	16
Number of functions	1	1
Number of terminals	48	48
word count	2097152 words	2097152 words
character code	2000000	2000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C
organize	2MX16	2MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA
Package shape	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL
Programming voltage	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.65 V	1.65 V
Nominal supply voltage (Vsup)	1.85 V	1.85 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	OTHER	COMMERCIAL
Terminal form	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM
width	6 mm	6 mm

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