Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, GLASS PACKAGE-2
| Parameter Name | Attribute value |
| Maker | Gulf Semiconductor |
| package instruction | E-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW LEAKAGE CURRENT |
| application | FAST RECOVERY |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.45 V |
| JESD-30 code | E-LALF-W2 |
| Maximum non-repetitive peak forward current | 30 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 1.5 A |
| Package body material | GLASS |
| Package shape | ELLIPTICAL |
| Package form | LONG FORM |
| Maximum repetitive peak reverse voltage | 1000 V |
| Maximum reverse current | 5 µA |
| Maximum reverse recovery time | 0.15 µs |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
