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BYV36E

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size69KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Download Datasheet Parametric View All

BYV36E Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, GLASS PACKAGE-2

BYV36E Parametric

Parameter NameAttribute value
MakerGulf Semiconductor
package instructionE-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.45 V
JESD-30 codeE-LALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1.5 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BYV36E
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE: 1000V
CURRENT: 1.5A
FEATURE
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
SOD-57
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Reverse Breakdown Voltage
at IR =0. 1mA
Maximum Average Forward Rectified Current
at Ttp=60°C, lead length=10mm
Peak Forward Surge Current at t=10ms half sinewave
Maximum Forward Voltage at rated Forward
Current and 25°C
I
F
= 1.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Maximum Reverse Recovery Time
Non Repetitive Reverse Avalanche Energy
at L=120mH
Typical Diode Capacitance at f=1MHz,V
R
=0V
Typical Thermal Resistance
Storage and Operating Junction Temperature
Note:
1. Reverse Recovery Condition I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
2. Device mounted on an epoxy-glass printed-circuit boars, 1.5mm thick; thichness of Cu-layer≥40μm
(Note 2)
Tj = 25°C
Tj = 150°C
(Note 1)
V
RRM
V
RMS
V
DC
V
(BR)R
I
F(AV)
I
FSM
V
F
I
R
Trr
E
R
Cd
R
th(ja)
Tstg, Tj
BYV36E
1000
700
1000
1100min
1.5
30
1.45
5.0
150
150
10
40
100
-65 to +175
units
V
V
V
V
A
A
V
µA
µA
nS
mJ
pF
K/W
Rev.A1
www.gulfsemi.com

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