BYV36A datasheet, PDF - EEWORLD Datasheet

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BYV36A: DescriptionRectifier Diode, Avalanche, 1 Phase, 1 Element, 1.6A, 200V V(RRM), Silicon, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size75KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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BYV36A Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.6A, 200V V(RRM), Silicon, GLASS PACKAGE-2

BYV36A Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	E-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.35 V
JESD-30 code	E-LALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1.6 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.1 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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BYV36A

SINTERED GLASS JUNCTION

FAST AVALANCHE RECTIFIER

VOLTAGE: 200V

CURRENT: 1.6A

FEATURE

Glass passivated

High maximum operating temperature

Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

SOD-57

MECHANICAL DATA

Case: SOD-57 sintered glass case

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Polarity: color band denotes cathode end

Mounting position: any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Reverse Breakdown Voltage at IR =0. 1mA

Maximum Average Forward Rectified Current

at Ttp=60°C, lead length=10mm

Peak Forward Surge Current at t=10ms half

sinewave

Maximum Forward Voltage at rated Forward

Current and 25°C

I

F

= 1.0A

Maximum DC Reverse Current

at rated DC blocking voltage

Maximum Reverse Recovery Time

Non Repetitive Reverse Avalanche Energy

at L=120Mh

Typical Diode Capacitance at f=1MHz,V

R

=0V

Typical Thermal Resistance

(Note 2)

Tj = 25°C

Tj = 165°C

(Note 1)

V

RRM

V

RMS

V

DC

V

(BR)R

I

F(AV)

I

FSM

V

F

I

R

Trr

E

R

Cd

R

th(ja)

Tstg, Tj

BYV36A

200

140

200

300min

1.6

30

1.35

5.0

150

100

10

45

100

-65 to +175

units

V

A

V

µA

nS

mJ

pF

K/W

℃

Storage and Operating Junction Temperature

Note:

1. Reverse Recovery Condition I

F

= 0.5A, I

R

= 1.0A, I

RR

= 0.25A

2. Device mounted on an epoxy-glass printed-circuit boars, 1.5mm thick; thichness of Cu-layer≥40μm

Rev.A1

www.gulfsemi.com

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