FJC1963
FJC1963
Audio Power Amplifier Applications
• Complement to FJC1308
• High Collector Current
• Low Collector-Emitter Saturation Voltage
SOT-89
1
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation(T
C
=25°C)
Junction Temperature
Storage Temperature
Value
50
30
6
3
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
I
C
=50µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50µA, I
C
=0
V
CE
=40V, V
B
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=0.5A
I
C
=1.5, I
B
=0.15A
I
C
=1.5, I
B
=0.15A
120
Min.
50
30
6
0.5
0.5
560
0.45
1.2
V
V
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
Q
120 ~ 270
Marking
R
180 ~ 390
S
280 ~ 560
FC Q
h
FE
grade
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJC1963
Typical Characteristics
1400
1000
I
B
= 7mA
I
C
[mA], COLLECTOR CURRENT
1200
V
CE
= 2V
I
B
= 6mA
h
FE
, DC CURRENT GAIN
1000
I
B
= 5mA
800
Ta = 125 C
o
I
B
= 4mA
600
Ta = 25 C
100
o
I
B
= 3mA
400
Ta = - 40 C
o
I
B
= 2mA
200
I
B
= 1mA
0
0
2
4
6
8
10
12
14
10
10m
100m
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
V
CE
(sat) [V], SATURATION VOLTAGE
1
Ta = 125 C
100m
o
V
BE
(sat) [V], SATURATION VOLTAGE
I
C
= 10I
B
I
C
= 10I
B
1
Ta = - 40 C
o
o
Ta = 25 C
10m
o
Ta = 25 C
Ta = 125 C
o
Ta = - 40 C
o
1m
10m
100m
1
10
100m
10m
100m
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
1.8
1.6
0.7
V
CE
= 2V
P
C
[W], COLLECTOR POWER DISSIPATION
0.6
I
C
[A], COLLECTOR CURRENT
1.4
1.2
1.0
0.8
0.6
0.4
0.5
0.4
0.3
0.2
125 C
0.2
0.0
0.0
o
25 C
o
- 40 C
o
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0
25
50
o
75
100
125
150
175
V
BE
[V], BASE-EMITTER VOLTAGE
T
a
[ C], AMIBIENT TEMPERATURE
Figure 5. Base-Emitter On Voltage
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
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Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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