Bulletin I25172 rev. B 04/00
ST303C..C SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Puk Version
620A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (E-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range (*)
T
J
ST303C..C
620
55
1180
25
7950
8320
316
289
400 to 1200
10 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
(*) t = 10 to 20µs for 400 to 800V devices
q
t = 15 to 30µs for 1000 to 1200V devices
q
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1
ST303C..C Series
Bulletin I25172 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
ST303C..C
08
10
12
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
400
800
1000
1200
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
1100
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
50
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
1314
1260
900
340
50
V
DRM
50
40
I
TM
180
o
el
1130
1040
700
230
50
50
55
2070
2190
1900
910
50
V
DRM
-
40
I
TM
100µs
1940
1880
1590
710
50
-
55
6930
3440
1850
740
50
V
DRM
-
40
I
TM
Units
6270
2960
1540
560
50
-
55
V
A/µs
°C
A
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST303C..C
620 (230)
55 (85)
1180
7950
8320
6690
7000
Units
A
°C
Conditions
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
t
Maximum I
2
t for fusing
316
289
224
204
KA
2
s
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
3160
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
2
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ST303C..C Series
Bulletin I25172 rev. B 04/00
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
Low level value of forward
slope resistance
t
2
ST303C..C Units
2.16
1.44
1.48
0.57
mΩ
0.56
600
1000
mA
V
Conditions
I
TM
= 1255A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
V
T(TO)1
Low level value of threshold
High level value of forward
slope resistance
Maximum holding current
Typical latching current
I
H
I
L
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST303C..C
1000
0.83
Min
10
q
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
t
q
q
Max. turn-off time (*)
Max
30
µs
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST303C..C
500
50
Units
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST303C..C
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST303C..C Series
Bulletin I25172 rev. B 04/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST303C..C
-40 to 125
-40 to 150
0.09
0.04
0.020
0.010
9800
(1000)
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
83
TO - 200AB (E-PUK)
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
Single Side Double Side
0.010
0.012
0.015
0.022
0.036
0.010
0.012
0.015
0.022
0.036
Rectangular conduction
Single Side Double Side
0.007
0.012
0.016
0.023
0.036
0.007
0.013
0.017
0.023
0.037
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
30
2
3
3
C
4
12
5
C
6
H
7
K
8
1
9
10
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (E-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
dv/dt - t
q
combinations available
dv/dt (V/µs)
20
10
CN
t
q
(µs)
12
CM
up to 800V 15
CL
20
CK
15
18
20
only for
25
1000/1200V 30
t
q
(µs)
CL
CP
CK
CJ
--
50
DN
DM
DL
DK
--
DP
DK
DJ
DH
100
EN
EM
EL
EK
--
--
EK
EJ
EH
200
FN *
FM
FL *
FK *
400
HN
HM
HL
HK
--
--
--
--
FK *
HK
FJ *
HJ
FH HH
*
Standard part number.
All other types available only on request.
4
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ST303C..C Series
Bulletin I25172 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
14.1 / 15.1
(0.56 / 0.59)
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( °C )
1 30
1 20
1 10
1 00
90
80
70
M a x im u m A llo w a b le H e a t sin k T e m pe ra t ure (°C )
ST 3 0 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R
thJ-hs
(D C ) = 0 .0 9 K / W
130
120
110
100
90
80
70
60
50
40
30
20
0
10 0
2 00
30°
S T 3 0 3 C ..C Se rie s
(S in g le Sid e C o o le d )
R
th J-hs
C ) = 0 .0 9 K / W
(D
C o nd uc tio n A ng le
C o ndu ctio n Pe rio d
30°
60
50
40
0
50
1 00 1 5 0 2 0 0 25 0 30 0 3 5 0 4 00
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
60°
90 °
120 °
60 °
90°
1 20°
18 0°
300
40 0
50 0
DC
600
7 00
1 80°
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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Embedded System
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