Doc No.
TT4-EA-12969
Revision.
2
Product Standards
Zener Diode
DZ5J068D0R
DZ5J068D0R
Silicon epitaxial planar type
For surge absorption circuit
DZ5X068D in SMini5 type package
Features
Excellent rising characteristics of zener current Iz
Low zener operating resistance Rz
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
5
Unit: mm
2.0
0.2
4
0.13
1
2
3
1.25
2.1
0.7
(0.65)
(0.65)
1.3
Marking Symbol:02
Basic Part Number :
Dual DZ3X068D (Common anode)
Packaging
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)
1. Cathode1
4 Cathode3
2.
Anode1,2,3,4
5. Cathode4
3. Cathode2
Panasonic
JEITA
Code
SMini5-F3-B
SC-113CB
SOT-353
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Total power dissipation
Electrostatic discharge
*2
Junction temperature
Operating ambient temperature
Storage temperature
*1
Rating
200
±10
150
-40 to +85
-55 to +150
Unit
mW
kV
°C
°C
°C
PT
ESD
Tj
Topr
Tstg
Internal Connection
5
4
Note) *1: PT = 200 mW achieved with a printed circuit board.
(4Diode total)
*2:
Test method:IEC61000_4_2(C = 150 pF,R = 330
,
Contact discharge:10 times)
1
2
3
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Forward voltage
Zener voltage
*1, *2
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
VF
VZ
RZ
RZK
IR
SZ
Conditions
IF = 10 mA
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 4 V
IZ = 5 mA
Min
6.46
Typ Max
1.0
7.14
30
60
0.1
3.1
Unit
V
V
μA
mV/°C
*3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page 1 of 4
Established : 2010-12-27
Revised
: 2013-11-01
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