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MURD310

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, COMPACT, PLASTIC, DPAK-3
CategoryDiscrete semiconductor    diode   
File Size62KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MURD310 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, COMPACT, PLASTIC, DPAK-3

MURD310 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionR-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationULTRA FAST RECOVERY POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
Maximum reverse recovery time0.036 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Index Files: 83  1053  1893  1175  2737  2  22  39  24  56 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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